RAL035P01 Specs and Replacement
Type Designator: RAL035P01
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 3.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 170 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TUMT6
RAL035P01 substitution
- MOSFET ⓘ Cross-Reference Search
RAL035P01 datasheet
ral035p01.pdf
Data Sheet 1.5V Drive Pch MOSFET RAL035P01 Structure Dimensions (Unit mm) Silicon P-channel MOSFET TUMT6 Features 1) Low On-resistance. 2) Small high power package. 3) Low voltage drive.(1.5V) Abbreviated symbol SB Application Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code TCR 2 Basic ordering unit (pieces) ... See More ⇒
Detailed specifications: R6020FNX, R6025ANZ, R6046ANZ, R6046FNZ, R8002ANX, R8008ANX, RAF040P01, RAL025P01, AON7506, RAL045P01, RAQ045P01, RCD040N25, RCD050N20, RCD060N25, RCD075N20, RCD080N25, RCD100N20
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: DMN3190LDW | 9N90G-TF2-T
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