RCD100N20 Specs and Replacement

Type Designator: RCD100N20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: CPT3 SC63 SOT428

RCD100N20 substitution

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RCD100N20 datasheet

 ..1. Size:1162K  rohm
 rcd100n20.pdf pdf_icon

RCD100N20

Data Sheet 10V Drive Nch MOSFET RCD100N20 Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 6.5 (SC-63) 5.1 2.3 0.5 Features 1) Low on-resistance. 2) High-speed switching. 0.75 3) Wide range of SOA. 0.65 0.9 2.3 (1) (2) (3) 4) Drive circuits can be simple. 2.3 0.5 1.0 5) Parallel use is easy. Application Switching Packaging spe... See More ⇒

 7.1. Size:361K  rohm
 rcd100n19.pdf pdf_icon

RCD100N20

RCD100N19 Nch 190V 10A Power MOSFET Datasheet lOutline VDSS 190V CPT3 (SC-63) RDS(on) (Max.) 182mW (3) ID 10A (2) (1) PD 20W lFeatures lInner circuit 1) Low voltage drive (4V drive). (1) Gate 2) Low on-resistance. (2) Drain (3) Source 3) Fast switching speed. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead plat... See More ⇒

Detailed specifications: RAL035P01, RAL045P01, RAQ045P01, RCD040N25, RCD050N20, RCD060N25, RCD075N20, RCD080N25, IRF1407, RCJ330N25, RCJ450N20, RCX050N25, RCX080N20, RCX080N25, RCX120N20, RCX120N25, RCX160N20

Keywords - RCD100N20 MOSFET specs

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