All MOSFET. RCD100N20 Datasheet

 

RCD100N20 Datasheet and Replacement


   Type Designator: RCD100N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: CPT3 SC63 SOT428
 

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RCD100N20 Datasheet (PDF)

 ..1. Size:1162K  rohm
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RCD100N20

Data Sheet10V Drive Nch MOSFET RCD100N20 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.5(SC-63)5.12.30.5Features1) Low on-resistance.2) High-speed switching.0.753) Wide range of SOA.0.650.9 2.3(1) (2) (3)4) Drive circuits can be simple. 2.3 0.51.05) Parallel use is easy. ApplicationSwitching Packaging spe

 7.1. Size:361K  rohm
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RCD100N20

RCD100N19 Nch 190V 10A Power MOSFET DatasheetlOutlineVDSS190VCPT3(SC-63)RDS(on) (Max.)182mW(3) ID10A(2) (1) PD20WlFeatures lInner circuit1) Low voltage drive (4V drive).(1) Gate 2) Low on-resistance.(2) Drain (3) Source 3) Fast switching speed.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lead plat

Datasheet: RAL035P01 , RAL045P01 , RAQ045P01 , RCD040N25 , RCD050N20 , RCD060N25 , RCD075N20 , RCD080N25 , P0903BDG , RCJ330N25 , RCJ450N20 , RCX050N25 , RCX080N20 , RCX080N25 , RCX120N20 , RCX120N25 , RCX160N20 .

History: SWH15P03 | NTTFS4C05N

Keywords - RCD100N20 MOSFET datasheet

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