RCX050N25 MOSFET. Datasheet pdf. Equivalent
Type Designator: RCX050N25
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.5 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9 nC
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 30 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO220FM
RCX050N25 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RCX050N25 Datasheet (PDF)
rcx050n25.pdf
Data Sheet10V Drive Nch MOSFET RCX050N25 Structure Dimensions (Unit : mm)TO-220FMSilicon N-channel MOSFET10.0 3.2 4.52.8Features1) Low on-resistance.1.21.32) Low input capacitance.3) High ESD.0.82.54 2.54 0.75 2.6(1) (2) (3) ApplicationSwitching Packaging specifications Inner circuitPackage BulkTypeCode -1Basic ordering un
rcx051n25.pdf
RCX051N25 Nch 250V 5.0A Power MOSFET DatasheetlOutlineVDSS250V TO-220FMRDS(on) (Max.)1360mWID5.0A(3) PD30W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Drive circuits can be simple.4) Parallel use is easy.*1 BODY DIODE 5) Pb-free lead plating ; RoHS compliant6) 100% Avalanche tested
rcx051n25.pdf
isc N-Channel MOSFET Transistor RCX051N25FEATURESDrain Current I = 5A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSStatic Drain-Source On-Resistance: R = 1.36(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
Datasheet: RCD040N25 , RCD050N20 , RCD060N25 , RCD075N20 , RCD080N25 , RCD100N20 , RCJ330N25 , RCJ450N20 , P0903BDG , RCX080N20 , RCX080N25 , RCX120N20 , RCX120N25 , RCX160N20 , RCX330N25 , RCX450N20 , RHK005N03 .
History: NCE60P82AD
History: NCE60P82AD
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