RCX330N25 Specs and Replacement

Type Designator: RCX330N25

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 33 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.077 Ohm

Package: TO220FM

RCX330N25 substitution

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RCX330N25 datasheet

 ..1. Size:1240K  rohm
 rcx330n25.pdf pdf_icon

RCX330N25

Data Sheet 10V Drive Nch MOSFET RCX330N25 Structure Dimensions (Unit mm) TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 Features 1.2 1) Low on-resistance. 1.3 2) Fast switching speed. 0.8 3) Gate-source voltage 2.54 2.54 0.75 2.6 VGSS garanteed to be 30V . (1) (2) (3) 4) High package power. Application Inner circuit Switching 1 Packagin... See More ⇒

 ..2. Size:251K  inchange semiconductor
 rcx330n25.pdf pdf_icon

RCX330N25

isc N-Channel MOSFET Transistor RCX330N25 FEATURES Drain Current I = 33A@ T =25 D C Drain Source Voltage- V =250V(Min) DSS Static Drain-Source On-Resistance R = 105m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒

Detailed specifications: RCJ330N25, RCJ450N20, RCX050N25, RCX080N20, RCX080N25, RCX120N20, RCX120N25, RCX160N20, IRF520, RCX450N20, RHK005N03, RHP020N06, RHP030N03, RJK005N03, RJP020N06, RK7002B, RMW130N03

Keywords - RCX330N25 MOSFET specs

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