RMW130N03 Specs and Replacement
Type Designator: RMW130N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 310 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: PSOP8
RMW130N03 substitution
RMW130N03 datasheet
rmw130n03.pdf
Data Sheet 4.5V Drive Nch MOSFET RMW130N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET PSOP8 (8) (7) (6) (5) Features 0 0.1 1) High Power package(PSOP8). 2) High-speed switching,Low On-resistance. 1pin mark (1) (2) (3) (4) 0.22 0.4 3) Low voltage drive(4.5V drive). 0.9 1.27 5.0 Application Switching Packaging specifications Inner circuit... See More ⇒
Detailed specifications: RCX330N25 , RCX450N20 , RHK005N03 , RHP020N06 , RHP030N03 , RJK005N03 , RJP020N06 , RK7002B , AO3400A , RMW150N03 , RMW180N03 , RMW200N03 , RMW280N03 , RP1A090ZP , RP1E070XN , RP1E075RP , RP1E090RP .
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