RP1E090RP MOSFET Datasheet: P-Ch, 30V, 9A. Full specification with pinout and replacement list

RP1E090RP Specs and Replacement

Type Designator: RP1E090RP

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: MPT6

RP1E090RP substitution

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RP1E090RP datasheet

..1. Size:288K rohm
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4V Drive Pch MOSFET RP1E090RP Structure Dimensions (Unit mm) Silicon P-channel MOSFET MPT6 (6) (5) (4) Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (MPT6). (1) (2) (3) Application Switching Packaging specifications Inner circuit Package Taping (6) (5) (4) Type Code TR Basic ordering unit (pieces) 1000... See More ⇒

0.1. Size:286K rohm
rp1e090rptr.pdf pdf_icon

7.1. Size:1066K rohm
rp1e090xn.pdf pdf_icon

Data Sheet 4V Drive Nch MOSFET RP1E090XN Structure Dimensions (Unit mm) Silicon N-channel MOSFET MPT6 (Single) (6) (5) (4) Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. (1) (2) (3) 3) Small Surface Mount Package (MPT6). Application Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code TR Basic order... See More ⇒

9.1. Size:1121K rohm
rp1e070xn.pdf pdf_icon

Data Sheet 4V Drive Nch MOSFET RP1E070XN Structure Dimensions (Unit mm) Silicon N-channel MOSFET MPT6 (Single) (6) (5) (4) Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. (1) (2) (3) 3) Small Surface Mount Package (MPT6). Application Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code TR Basic order... See More ⇒