RP1E090XN
MOSFET. Datasheet pdf. Equivalent
Type Designator: RP1E090XN
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 6.8
nC
trⓘ - Rise Time: 30
nS
Cossⓘ -
Output Capacitance: 170
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012
Ohm
Package: MPT6
RP1E090XN
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RP1E090XN
Datasheet (PDF)
..1. Size:1066K rohm
rp1e090xn.pdf 
Data Sheet4V Drive Nch MOSFET RP1E090XN Structure Dimensions (Unit : mm)Silicon N-channel MOSFETMPT6(Single)(6) (5) (4)Features1) Low on-resistance.2) Built-in G-S Protection Diode.(1) (2) (3)3) Small Surface Mount Package (MPT6). ApplicationSwitching Packaging specifications Inner circuit(6) (5) (4)Package TapingTypeCode TRBasic order
7.1. Size:286K rohm
rp1e090rptr.pdf
4V Drive Pch MOSFET RP1E090RP Structure Dimensions (Unit : mm)Silicon P-channel MOSFETMPT6(6) (5) (4)Features1) Low on-resistance.2) Built-in G-S Protection Diode.3) Small Surface Mount Package (MPT6).(1) (2) (3) ApplicationSwitching Packaging specifications Inner circuitPackage Taping(6) (5) (4)TypeCode TRBasic ordering unit (pieces) 1000
7.2. Size:288K rohm
rp1e090rp.pdf
4V Drive Pch MOSFET RP1E090RP Structure Dimensions (Unit : mm)Silicon P-channel MOSFETMPT6(6) (5) (4)Features1) Low on-resistance.2) Built-in G-S Protection Diode.3) Small Surface Mount Package (MPT6).(1) (2) (3) ApplicationSwitching Packaging specifications Inner circuitPackage Taping(6) (5) (4)TypeCode TRBasic ordering unit (pieces) 1000
9.1. Size:1121K rohm
rp1e070xn.pdf
Data Sheet4V Drive Nch MOSFET RP1E070XN Structure Dimensions (Unit : mm)Silicon N-channel MOSFETMPT6(Single)(6) (5) (4)Features1) Low on-resistance.2) Built-in G-S Protection Diode.(1) (2) (3)3) Small Surface Mount Package (MPT6). ApplicationSwitching Packaging specifications Inner circuit(6) (5) (4)Package TapingTypeCode TRBasic order
9.2. Size:298K rohm
rp1e050rp.pdf
4V Drive Pch MOSFET RP1E050RP Structure Dimensions (Unit : mm)Silicon P-channel MOSFETMPT6(Single)(6) (5) (4)Features1) Low On-resistance.2) High power package.(1) (2) (3)3) 4V drive. ApplicationSwitching Packaging specifications Inner circuit(6) (5) (4)Package TapingTypeCode TRBasic ordering unit (pieces) 1000RP1E050RP 2(1)
9.3. Size:295K rohm
rp1e050rptr.pdf
4V Drive Pch MOSFET RP1E050RP Structure Dimensions (Unit : mm)Silicon P-channel MOSFETMPT6(Single)(6) (5) (4)Features1) Low On-resistance.2) High power package.(1) (2) (3)3) 4V drive. ApplicationSwitching Packaging specifications Inner circuit(6) (5) (4)Package TapingTypeCode TRBasic ordering unit (pieces) 1000RP1E050RP 2(1)
9.4. Size:394K rohm
rp1e075rp.pdf
4V Drive Pch MOSFET RP1E075RP Structure Dimensions (Unit : mm)Silicon P-channel MOSFETMPT6(Single)Features (6) (5) (4)1) Low On-resistance.2) High power package.(1) (2) (3)3) 4V drive. ApplicationSwitching Inner circuit(6) (5) (4) Packaging specificationsPackage TapingTypeCode TR2Basic ordering unit (pieces) 1000(1) SourceRP1E075
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