All MOSFET. RP1H065SP Datasheet

 

RP1H065SP Datasheet and Replacement


   Type Designator: RP1H065SP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: MPT6
 

 RP1H065SP substitution

   - MOSFET ⓘ Cross-Reference Search

 

RP1H065SP Datasheet (PDF)

 ..1. Size:1192K  rohm
 rp1h065sp.pdf pdf_icon

RP1H065SP

Data Sheet4V Drive Pch MOSFET RP1H065SP Structure Dimensions (Unit : mm)Silicon P-channel MOSFETMPT6(Single)(6) (5) (4)Features1) Low on-resistance.2) Built-in G-S Protection Diode.(1) (2) (3)3) Small Surface Mount Package (MPT6). ApplicationSwitching Packaging specifications Inner circuit(6) (5) (4)Package TapingTypeCode TRBasic order

Datasheet: RP1A090ZP , RP1E070XN , RP1E075RP , RP1E090RP , RP1E090XN , RP1E100RP , RP1E100XN , RP1E125XN , 2SK3918 , RP1L055SN , RP1L080SN , RQ1A060ZP , RQ1A070AP , RQ1A070ZP , RQ1C065UN , RQ1C075UN , RQ1E050RP .

History: KF3N60I

Keywords - RP1H065SP MOSFET datasheet

 RP1H065SP cross reference
 RP1H065SP equivalent finder
 RP1H065SP lookup
 RP1H065SP substitution
 RP1H065SP replacement

 

 
Back to Top

 


 
.