RP1H065SP Specs and Replacement

Type Designator: RP1H065SP

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: MPT6

RP1H065SP substitution

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RP1H065SP datasheet

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RP1H065SP

Data Sheet 4V Drive Pch MOSFET RP1H065SP Structure Dimensions (Unit mm) Silicon P-channel MOSFET MPT6 (Single) (6) (5) (4) Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. (1) (2) (3) 3) Small Surface Mount Package (MPT6). Application Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code TR Basic order... See More ⇒

Detailed specifications: RP1A090ZP, RP1E070XN, RP1E075RP, RP1E090RP, RP1E090XN, RP1E100RP, RP1E100XN, RP1E125XN, EMB04N03H, RP1L055SN, RP1L080SN, RQ1A060ZP, RQ1A070AP, RQ1A070ZP, RQ1C065UN, RQ1C075UN, RQ1E050RP

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.