RP1L055SN Specs and Replacement

Type Designator: RP1L055SN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: MPT6

RP1L055SN substitution

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RP1L055SN datasheet

 ..1. Size:1167K  rohm
 rp1l055sn.pdf pdf_icon

RP1L055SN

Data Sheet 4V Drive Nch MOSFET RP1L055SN Structure Dimensions (Unit mm) Silicon N-channel MOSFET MPT6 (Single) (6) (5) (4) Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. (1) (2) (3) 3) Small Surface Mount Package (MPT6). Application Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code TR Basic order... See More ⇒

 9.1. Size:1186K  rohm
 rp1l080sn.pdf pdf_icon

RP1L055SN

Data Sheet 4V Drive Nch MOSFET RP1L080SN Structure Dimensions (Unit mm) Silicon N-channel MOSFET MPT6 (Single) (6) (5) (4) Features 1) Low on-resistance. 2) Fast switching speed. (1) (2) (3) 3) Drive circuits can be simple. 4) Parallel use is easy. Application Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code TR Bas... See More ⇒

Detailed specifications: RP1E070XN, RP1E075RP, RP1E090RP, RP1E090XN, RP1E100RP, RP1E100XN, RP1E125XN, RP1H065SP, RU7088R, RP1L080SN, RQ1A060ZP, RQ1A070AP, RQ1A070ZP, RQ1C065UN, RQ1C075UN, RQ1E050RP, RQ1E070RP

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.