RQ1C075UN Specs and Replacement

Type Designator: RQ1C075UN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 310 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: TSMT8

RQ1C075UN substitution

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RQ1C075UN datasheet

 ..1. Size:343K  rohm
 rq1c075un.pdf pdf_icon

RQ1C075UN

1.5V Drive Nch MOSFET RQ1C075UN Structure Dimensions (Unit mm) TSMT8 Silicon N-channel MOSFET (8) (7) (6) (5) Features 1) Low on-resistance. (1) (2) (3) (4) 2) High power package(TSMT8). 3) Low voltage drive(1.5V drive). Abbreviated symbol XH Application Switching Packaging specifications Inner circuit (8) (7) (6) (5) Package Taping Type Code TR Ba... See More ⇒

 9.1. Size:328K  rohm
 rq1c065un.pdf pdf_icon

RQ1C075UN

1.5V Drive Nch MOSFET RQ1C065UN Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT8 (8) (7) (6) (5) Features 1) Low on-resistance. (1) (2) (3) (4) 2) High power package(TSMT8). 3) Low voltage drive(1.5V drive). Abbreviated symbol VB Application Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (5) Type Code TR Basi... See More ⇒

Detailed specifications: RP1E125XN, RP1H065SP, RP1L055SN, RP1L080SN, RQ1A060ZP, RQ1A070AP, RQ1A070ZP, RQ1C065UN, AO4468, RQ1E050RP, RQ1E070RP, RQ1E075XN, RQ1E100XN, RRF015P03, RRH040P03, RRH050P03, RRH075P03

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