All MOSFET. RQ1C075UN Datasheet

 

RQ1C075UN Datasheet and Replacement


   Type Designator: RQ1C075UN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TSMT8
 

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RQ1C075UN Datasheet (PDF)

 ..1. Size:343K  rohm
 rq1c075un.pdf pdf_icon

RQ1C075UN

1.5V Drive Nch MOSFET RQ1C075UN Structure Dimensions (Unit : mm)TSMT8Silicon N-channel MOSFET(8) (7) (6) (5)Features1) Low on-resistance.(1) (2) (3) (4)2) High power package(TSMT8).3) Low voltage drive(1.5V drive).Abbreviated symbol : XH ApplicationSwitching Packaging specifications Inner circuit(8) (7) (6) (5)Package TapingTypeCode TRBa

 9.1. Size:328K  rohm
 rq1c065un.pdf pdf_icon

RQ1C075UN

1.5V Drive Nch MOSFET RQ1C065UN Structure Dimensions (Unit : mm)Silicon N-channel MOSFET TSMT8(8) (7) (6) (5)Features1) Low on-resistance.(1) (2) (3) (4)2) High power package(TSMT8).3) Low voltage drive(1.5V drive).Abbreviated symbol : VB ApplicationSwitching Packaging specifications Inner circuitPackage Taping (8) (7) (6) (5)TypeCode TRBasi

Datasheet: RP1E125XN , RP1H065SP , RP1L055SN , RP1L080SN , RQ1A060ZP , RQ1A070AP , RQ1A070ZP , RQ1C065UN , IRF730 , RQ1E050RP , RQ1E070RP , RQ1E075XN , RQ1E100XN , RRF015P03 , RRH040P03 , RRH050P03 , RRH075P03 .

History: NCE30ND09S | SHD225409 | STH275N8F7-6AG | UPA1970 | HYG015N04LS1C2 | FKI07117 | SHD225405

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