2N6801-SM MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N6801-SM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 25 W
Maximum Drain-Source Voltage |Vds|: 450 V
Maximum Drain Current |Id|: 2.5 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm
Package: TO220SM
2N6801-SM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N6801-SM Datasheet (PDF)
5.1. 2n6806 irf9230.pdf 
Size:149K _international_rectifier
PD - 90548C IRF9230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6806 HEXFET?TRANSISTORS JANTXV2N6806 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/562] 200V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF9230 -200V 0.80 ? -6.5A The HEXFET?technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing o
5.2. 2n6800 irff330.pdf Size:130K _international_rectifier
PD - 90432C IRFF330 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6800 HEXFET?TRANSISTORS JANTXV2N6800 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/557 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF330 400V 1.0? 3.0A The HEXFET?technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of this la
5.3. 2n6802 irff430.pdf Size:129K _international_rectifier
PD -90433C IRFF430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6802 HEXFET?TRANSISTORS JANTXV2N6802 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/557 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF430 500V 1.5? 2.5A The HEXFET?technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of this lat
5.4. 2n6804 irf9130.pdf Size:149K _international_rectifier
PD - 90549C IRF9130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6804 HEXFET?TRANSISTORS JANTXV2N6804 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/562] 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF9130 -100V 0.30 ? -11A The HEXFET?technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of
5.5. irff1xx irff2xx irff3xx irff4xx 2n678x 2n679x 2n680x.pdf Size:99K _international_rectifier
5.6. 2n6796 2n6798 2n6800 2n6802.pdf Size:66K _omnirel
2N6796, JANTX2N6796 JANTXV2N6796 2N6800, JANTX2N6800, JANTXV2N6800 2N6798, JANTX2N6798 JANTXV2N6798 2N6802, JANTX2N6802, JANTXV2N6802 JANTX, JANTXV POWER MOSFET IN TO-205 AF PACKAGE, QUALIFIED TO MIL-PRF-19500/557 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor FEATURES Low RDS(on) Ease of Paralleling Qualified to MIL-PRF-19500/557 DESCRIPTION This h
5.7. 2n6800.pdf Size:24K _semelab
2N6800 SEME LAB MECHANICAL DATA Dimensions in mm (inches) NCHANNEL POWER MOSFET BVDSS 400V ID 3.0A RDS(on) 1.0 FEATURES ! AVALANCHE ENERGY RATED HER
Datasheet: 2N6799LCC4 , 2N6799-SM , 2N6800 , 2N6800JANTX , 2N6800JANTXV , 2N6800SM , 2N6801 , 2N6801LCC4 , IRFB4227 , 2N6802 , 2N6802JANTX , 2N6802JANTXV , 2N6802SM , 2N6823 , 2N6826 , 2N6845 , 2N6847 .
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