2N6801-SM Datasheet. Specs and Replacement
Type Designator: 2N6801-SM 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Id| ⓘ - Maximum Drain Current: 2.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO220SM
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2N6801-SM substitution
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2N6801-SM datasheet
2n6802u.pdf
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PD - 90548C IRF9230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6806 HEXFET TRANSISTORS JANTXV2N6806 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/562] 200V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF9230 -200V 0.80 -6.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique p... See More ⇒
Detailed specifications: 2N6799LCC4, 2N6799-SM, 2N6800, 2N6800JANTX, 2N6800JANTXV, 2N6800SM, 2N6801, 2N6801LCC4, CS150N04A8, 2N6802, 2N6802JANTX, 2N6802JANTXV, 2N6802SM, 2N6823, 2N6826, 2N6845, 2N6847
Keywords - 2N6801-SM MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
MOSFET Parameters. How They Affect Each Other
History: 2N6791LCC4
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