RRR040P03 Specs and Replacement

Type Designator: RRR040P03

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: TSMT3

RRR040P03 substitution

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RRR040P03 datasheet

 ..1. Size:294K  rohm
rrr040p03.pdf pdf_icon

RRR040P03

4V Drive Pch MOSFET RRR040P03 Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSMT3 Features (3) 1) Low On-resistance. 2) Space saving small surface mount package (TSMT3). (1) (2) 3) 4V drive. Abbreviated symbol UG Application Switching Packaging specifications Inner circuit (3) Package Taping Type Code TL Basic ordering unit (pieces) 3000 ... See More ⇒

 0.1. Size:2491K  rohm
rrr040p03fra.pdf pdf_icon

RRR040P03

RRR040P03FRA Datasheet Pch -30V -4A Small Signal MOSFET lOutline l SOT-346T VDSS -30V SC-96 RDS(on)(Max.) 45m TSMT3 ID 4A PD 1.0W lInner circuit l lFeatures l 1) Low on - resistance 2) Built-in G-S Protection Diode 3) Small Surface Mount Package (TSMT3) 4) Pb-free lead plating ; RoHS compliant 5) AEC-Q101 Qualified ... See More ⇒

 0.2. Size:867K  cn vbsemi
rrr040p03tl.pdf pdf_icon

RRR040P03

RRR040P03TL www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT... See More ⇒

Detailed specifications: RRH100P03, RRH140P03, RRL025P03, RRL035P03, RRQ030P03, RRQ045P03, RRR015P03, RRR030P03, AO3400, RSC002P03, RSD050N06, RSD050N10, RSD080N06, RSD080P05, RSD100N10, RSD140P06, RSD150N06

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