All MOSFET. RRR040P03 Datasheet

 

RRR040P03 Datasheet and Replacement


   Type Designator: RRR040P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10.5 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TSMT3
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RRR040P03 Datasheet (PDF)

 ..1. Size:294K  rohm
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RRR040P03

4V Drive Pch MOSFET RRR040P03 Structure Dimensions (Unit : mm)Silicon P-channel MOSFETTSMT3Features(3)1) Low On-resistance.2) Space saving small surface mount package (TSMT3).(1) (2)3) 4V drive.Abbreviated symbol : UG ApplicationSwitching Packaging specifications Inner circuit(3)Package TapingTypeCode TLBasic ordering unit (pieces) 3000

 0.1. Size:2491K  rohm
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RRR040P03

RRR040P03FRADatasheetPch -30V -4A Small Signal MOSFETlOutlinel SOT-346TVDSS-30V SC-96RDS(on)(Max.)45m TSMT3ID4APD1.0W lInner circuitllFeaturesl1) Low on - resistance2) Built-in G-S Protection Diode3) Small Surface Mount Package (TSMT3)4) Pb-free lead plating ; RoHS compliant5) AEC-Q101 Qualified

 0.2. Size:867K  cn vbsemi
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RRR040P03

RRR040P03TLwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT

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History: SVF7N60CK | MTB1D7N03ATH8 | PHP42N03LT | APT902RBN

Keywords - RRR040P03 MOSFET datasheet

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