RSD175N10 Specs and Replacement

Type Designator: RSD175N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: CPT3 SC63 SOT428

RSD175N10 substitution

- MOSFET ⓘ Cross-Reference Search

 

RSD175N10 datasheet

 ..1. Size:1159K  rohm
 rsd175n10.pdf pdf_icon

RSD175N10

Data Sheet 4V Drive Nch MOSFET RSD175N10 Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 6.5 (SC-63) 5.1 2.3 0.5 Features 1) Low on-resistance. 4) 4V drive. 0.75 4) High power package. 0.65 0.9 2.3 (1) (2) (3) 2.3 0.5 1.0 Application Switching Packaging specifications Inner circuit 1 Package Taping Type Code TL Bas... See More ⇒

 0.1. Size:1354K  rohm
 rsd175n10fra.pdf pdf_icon

RSD175N10

Data Sheet AEC-Q101 Qualified 4V Drive Nch MOSFET RSD175N10 RSD175N10FRA Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 6.5 (SC-63) 5.1 2.3 0.5 Features 1) Low on-resistance. 4) 4V drive. 0.75 4) High power package. 0.65 0.9 2.3 (1) (2) (3) 2.3 0.5 1.0 Application Switching Packaging specifications Inner circuit 1 ... See More ⇒

Detailed specifications: RSD050N06, RSD050N10, RSD080N06, RSD080P05, RSD100N10, RSD140P06, RSD150N06, RSD160P05, IRFP250N, RSD200N05, RSD200N10, RSE002N06, RSE002P03, RSF010P05, RSF014N03, RSF015N06, RSH065N06

Keywords - RSD175N10 MOSFET specs

 RSD175N10 cross reference

 RSD175N10 equivalent finder

 RSD175N10 pdf lookup

 RSD175N10 substitution

 RSD175N10 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility