All MOSFET. RSD175N10 Datasheet

 

RSD175N10 Datasheet and Replacement


   Type Designator: RSD175N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: CPT3 SC63 SOT428
 

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RSD175N10 Datasheet (PDF)

 ..1. Size:1159K  rohm
 rsd175n10.pdf pdf_icon

RSD175N10

Data Sheet4V Drive Nch MOSFET RSD175N10 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.5(SC-63)5.12.30.5Features1) Low on-resistance.4) 4V drive.0.754) High power package.0.650.9 2.3(1) (2) (3)2.3 0.51.0 ApplicationSwitching Packaging specifications Inner circuit1Package TapingTypeCode TLBas

 0.1. Size:1354K  rohm
 rsd175n10fra.pdf pdf_icon

RSD175N10

Data SheetAEC-Q101 Qualified4V Drive Nch MOSFET RSD175N10RSD175N10FRA Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.5(SC-63)5.12.30.5Features1) Low on-resistance.4) 4V drive.0.754) High power package.0.650.9 2.3(1) (2) (3)2.3 0.51.0 ApplicationSwitching Packaging specifications Inner circuit1

Datasheet: RSD050N06 , RSD050N10 , RSD080N06 , RSD080P05 , RSD100N10 , RSD140P06 , RSD150N06 , RSD160P05 , AON7408 , RSD200N05 , RSD200N10 , RSE002N06 , RSE002P03 , RSF010P05 , RSF014N03 , RSF015N06 , RSH065N06 .

History: LN235N3T5G | VBA2311

Keywords - RSD175N10 MOSFET datasheet

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