All MOSFET. RSJ400N06 Datasheet

 

RSJ400N06 Datasheet and Replacement


   Type Designator: RSJ400N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 490 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: LPTS
 

 RSJ400N06 substitution

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RSJ400N06 Datasheet (PDF)

 ..1. Size:1173K  rohm
 rsj400n06.pdf pdf_icon

RSJ400N06

Data Sheet10V Drive Nch MOSFET RSJ400N06 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETLPTS10.1 4.51.3Features1.241) Low on-resistance.2) High current2.54 0.40.783) High power Package2.75.08(1) (2) (3) ApplicationSwitching Packaging specifications Inner circuitPackage Taping1TypeCode TLBasic ordering unit (pieces

 0.1. Size:1347K  rohm
 rsj400n06fra.pdf pdf_icon

RSJ400N06

Data SheetAEC-Q101 Qualified10V Drive Nch MOSFET RSJ400N06RSJ400N06FRA Structure Dimensions (Unit : mm)Silicon N-channel MOSFETLPTS10.1 4.51.3Features1.241) Low on-resistance.2) High current2.54 0.40.783) High power Package2.75.08(1) (2) (3) ApplicationSwitching Packaging specifications Inner circuitPackage Taping1TypeCo

 7.1. Size:446K  rohm
 rsj400n10.pdf pdf_icon

RSJ400N06

RSJ400N10 Nch 100V 40A Power MOSFET DatasheetlOutline(2) VDSS100V LPTS(SC-83)RDS(on) (Max.)27mWID40A(1) PD50W (3) lFeatures lInner circuit(3) 1) Low on-resistance.(1) Gate *1 2) Fast switching speed.(2) Drain (3) Source (1) 3) Drive circuits can be simple.*2 4) Parallel use is easy.*1 ESD PROTECTION DIODE *2 BODY DIODE 5) Pb-free lead pl

Datasheet: RSF014N03 , RSF015N06 , RSH065N06 , RSH070N05 , RSH070P05 , RSJ10HN06 , RSJ250P10 , RSJ300N10 , AON7410 , RSJ450N04 , RSJ550N10 , RSJ650N10 , RSM002N06 , RSM002P03 , RSQ015N06 , RSQ015P10 , RSQ020N03 .

History: VBA2311

Keywords - RSJ400N06 MOSFET datasheet

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