RSQ015N06 Specs and Replacement
Type Designator: RSQ015N06
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 28 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm
Package: TSMT6
RSQ015N06 substitution
- MOSFET ⓘ Cross-Reference Search
RSQ015N06 datasheet
rsq015n06.pdf
4V Drive Nch MOSFET RSQ015N06 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 0.85 1.9 0.95 0.95 0.7 (6) (5) (4) Features 1) Low On-resistance. 0 0.1 2) Small Surface Mount Package (TSMT6). (1) (2) (3) 1pin mark 0.16 0.4 Abbreviated symbol PX Application Inner circuit Switching (6) (5) (4) 2 Packaging specifications Package T... See More ⇒
rsq015n06tr.pdf
RSQ015N06 Nch 60V 1.5A Power MOSFET Datasheet lOutline (6) VDSS TSMT6 60V (5) (4) RDS(on) (Max.) 290mW (1) ID 1.5A (2) PD 1.25W (3) lFeatures lInner circuit (1) Drain 1) Low on - resistance. (2) Drain 2) Built-in G-S Protection Diode. (3) Gate (4) Source 3) Small Surface Mount Package (TSMT6). (5) Drain (6) Drain 4) Pb-free lead plating ; RoHS compliant ... See More ⇒
rsq015p10.pdf
Data Sheet 4V Drive Pch MOSFET RSQ015P10 Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSMT6 Features 1) Low on-resistance. 2) Low voltage drive(4V). 3) Small surface mount package (TSMT6). Abbreviated symbol ZN Application Switching Packaging specifications Inner circuit Package Taping (6) (5) (4) Type Code TR 2 Basic ordering unit (p... See More ⇒
Detailed specifications: RSJ250P10, RSJ300N10, RSJ400N06, RSJ450N04, RSJ550N10, RSJ650N10, RSM002N06, RSM002P03, 5N65, RSQ015P10, RSQ020N03, RSQ045N03, RSR010N10, RSR020N06, RSR025N03, RSR025N05, RSR030N06
Keywords - RSQ015N06 MOSFET specs
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