RUF020N02 MOSFET. Datasheet pdf. Equivalent
Type Designator: RUF020N02
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 45 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: TUMT3
RUF020N02 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RUF020N02 Datasheet (PDF)
ruf020n02.pdf
1.5V Drive Nch MOSFET RUF020N02 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount Package (TUMT3). 3) Low voltage drive (1.5V drive). (1) Gate(2) SourceAbbreviated symbol : XK(3) Drain Applications Inner circuit Switching (3) Packaging specifications 2(1)Package Taping
ruf025n02.pdf
RUF025N02 Transistors 1.5V Drive Nch MOSFET RUF025N02 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (1.5V drive). (1) Gate(2) SourceAbbreviated symbol : XE Applications(3) DrainSwitching Packaging specifications Inner circuitPacka
ruf025n02tl.pdf
RUF025N02 Transistors 1.5V Drive Nch MOSFET RUF025N02 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (1.5V drive). (1) Gate(2) SourceAbbreviated symbol : XE Applications(3) DrainSwitching Packaging specifications Inner circuitPacka
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
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