RUF020N02 Datasheet and Replacement
Type Designator: RUF020N02
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 45 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: TUMT3
RUF020N02 substitution
RUF020N02 Datasheet (PDF)
ruf020n02.pdf

1.5V Drive Nch MOSFET RUF020N02 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount Package (TUMT3). 3) Low voltage drive (1.5V drive). (1) Gate(2) SourceAbbreviated symbol : XK(3) Drain Applications Inner circuit Switching (3) Packaging specifications 2(1)Package Taping
ruf025n02.pdf

RUF025N02 Transistors 1.5V Drive Nch MOSFET RUF025N02 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (1.5V drive). (1) Gate(2) SourceAbbreviated symbol : XE Applications(3) DrainSwitching Packaging specifications Inner circuitPacka
ruf025n02tl.pdf

RUF025N02 Transistors 1.5V Drive Nch MOSFET RUF025N02 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (1.5V drive). (1) Gate(2) SourceAbbreviated symbol : XE Applications(3) DrainSwitching Packaging specifications Inner circuitPacka
Datasheet: RU1C002UN , RU1C002ZP , RU1E002SP , RU1L002SN , RUC002N05 , RUE002N02 , RUE002N05 , RUF015N02 , P0903BDG , RUF025N02 , RUL035N02 , RUM002N02 , RUM002N05 , RUQ050N02 , RUR020N02 , RUR040N02 , RUU002N05 .
History: 2SK3541MGP | STL70N10F3 | SFS12R08PNF | NTHS4101PT1G | FDZ375P | 2SK538
Keywords - RUF020N02 MOSFET datasheet
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History: 2SK3541MGP | STL70N10F3 | SFS12R08PNF | NTHS4101PT1G | FDZ375P | 2SK538



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