RUF025N02 MOSFET Datasheet: N-Ch, 20V, 2.5A. Full specification with pinout and replacement list

RUF025N02 Specs and Replacement

Type Designator: RUF025N02

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm

Package: TUMT3

RUF025N02 substitution

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RUF025N02 datasheet

..1. Size:105K rohm
ruf025n02.pdf pdf_icon

RUF025N02 Transistors 1.5V Drive Nch MOSFET RUF025N02 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) Low voltage drive (1.5V drive). (1) Gate (2) Source Abbreviated symbol XE Applications (3) Drain Switching Packaging specifications Inner circuit Packa... See More ⇒

0.1. Size:103K ruichips
ruf025n02tl.pdf pdf_icon

9.1. Size:228K rohm
ruf020n02.pdf pdf_icon

1.5V Drive Nch MOSFET RUF020N02 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount Package (TUMT3). 3) Low voltage drive (1.5V drive). (1) Gate (2) Source Abbreviated symbol XK (3) Drain Applications Inner circuit Switching (3) Packaging specifications 2 (1) Package Taping ... See More ⇒

Detailed specifications: RU1C002ZP, RU1E002SP, RU1L002SN, RUC002N05, RUE002N02, RUE002N05, RUF015N02, RUF020N02, IRLB3034, RUL035N02, RUM002N02, RUM002N05, RUQ050N02, RUR020N02, RUR040N02, RUU002N05, RVQ040N05