RUL035N02 MOSFET. Datasheet pdf. Equivalent
Type Designator: RUL035N02
Marking Code: XD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 10 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V
Maximum Drain Current |Id|: 3.5 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 20 nS
Drain-Source Capacitance (Cd): 110 pF
Maximum Drain-Source On-State Resistance (Rds): 0.043 Ohm
Package: TUMT6
RUL035N02 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RUL035N02 Datasheet (PDF)
rul035n02.pdf
RUL035N02 Transistors 1.5V Drive Nch MOSFET RUL035N02 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (1.5V drive). Abbreviated symbol : XD ApplicationsSwitching Packaging specifications Inner circuit(6) (5) (4)Package TapingType Code
rul035n02tr.pdf
RUL035N02 Transistors 1.5V Drive Nch MOSFET RUL035N02 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (1.5V drive). Abbreviated symbol : XD ApplicationsSwitching Packaging specifications Inner circuit(6) (5) (4)Package TapingType Code
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