RUL035N02 Specs and Replacement
Type Designator: RUL035N02
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 3.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 110 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
Package: TUMT6
RUL035N02 substitution
- MOSFET ⓘ Cross-Reference Search
RUL035N02 datasheet
rul035n02.pdf
RUL035N02 Transistors 1.5V Drive Nch MOSFET RUL035N02 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TUMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (1.5V drive). Abbreviated symbol XD Applications Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code ... See More ⇒
rul035n02tr.pdf
RUL035N02 Transistors 1.5V Drive Nch MOSFET RUL035N02 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TUMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (1.5V drive). Abbreviated symbol XD Applications Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code ... See More ⇒
Detailed specifications: RU1E002SP, RU1L002SN, RUC002N05, RUE002N02, RUE002N05, RUF015N02, RUF020N02, RUF025N02, IRF9640, RUM002N02, RUM002N05, RUQ050N02, RUR020N02, RUR040N02, RUU002N05, RVQ040N05, RW1A013ZP
Keywords - RUL035N02 MOSFET specs
RUL035N02 cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: 2SK1498 | KCY3303S | IAUC28N08S5L230 | JMSH0602AG | HY3210M | RZQ045P01TR | IAUC24N10S5L300
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