All MOSFET. RUL035N02 Datasheet

 

RUL035N02 Datasheet and Replacement


   Type Designator: RUL035N02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
   Package: TUMT6
 

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RUL035N02 Datasheet (PDF)

 ..1. Size:102K  rohm
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RUL035N02

RUL035N02 Transistors 1.5V Drive Nch MOSFET RUL035N02 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (1.5V drive). Abbreviated symbol : XD ApplicationsSwitching Packaging specifications Inner circuit(6) (5) (4)Package TapingType Code

 0.1. Size:100K  ruichips
 rul035n02tr.pdf pdf_icon

RUL035N02

RUL035N02 Transistors 1.5V Drive Nch MOSFET RUL035N02 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (1.5V drive). Abbreviated symbol : XD ApplicationsSwitching Packaging specifications Inner circuit(6) (5) (4)Package TapingType Code

Datasheet: RU1E002SP , RU1L002SN , RUC002N05 , RUE002N02 , RUE002N05 , RUF015N02 , RUF020N02 , RUF025N02 , AON7403 , RUM002N02 , RUM002N05 , RUQ050N02 , RUR020N02 , RUR040N02 , RUU002N05 , RVQ040N05 , RW1A013ZP .

History: NVMFD020N06C | IPD90N04S3-H4 | AFP8452 | HM120N04D

Keywords - RUL035N02 MOSFET datasheet

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