RUQ050N02 MOSFET Datasheet: N-Ch, 20V, 5A. Full specification with pinout and replacement list

RUQ050N02 Specs and Replacement

Type Designator: RUQ050N02

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: TSMT6

RUQ050N02 substitution

- MOSFET ⓘ Cross-Reference Search

RUQ050N02 datasheet

..1. Size:1078K rohm
ruq050n02.pdf pdf_icon

1.5V Drive Nch MOSFET RUQ050N02 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) 1.5V drive Applications Switching Each lead has same dimensions Abbreviated symbol XG Packaging specifications Inner circuit Package Taping (6) (5) (4) Type Code ... See More ⇒

0.1. Size:540K ruichips
ruq050n02tr.pdf pdf_icon

0.2. Size:1854K ruichips
ruq050n02fra.pdf pdf_icon

AEC-Q101 Qualified 1.5V Drive Nch MOSFET RUQ050N02 RUQ050N02FRA Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) 1.5V drive Applications Switching Each lead has same dimensions Abbreviated symbol XG Packaging specifications Inner circuit Package T... See More ⇒

Detailed specifications: RUE002N02, RUE002N05, RUF015N02, RUF020N02, RUF025N02, RUL035N02, RUM002N02, RUM002N05, K2611, RUR020N02, RUR040N02, RUU002N05, RVQ040N05, RW1A013ZP, RW1A020ZP, RW1A025AP, RW1A030AP