All MOSFET. RUQ050N02 Datasheet

 

RUQ050N02 Datasheet and Replacement


   Type Designator: RUQ050N02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TSMT6
 

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RUQ050N02 Datasheet (PDF)

 ..1. Size:1078K  rohm
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RUQ050N02

1.5V Drive Nch MOSFET RUQ050N02 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT6Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) 1.5V drive ApplicationsSwitching Each lead has same dimensions Abbreviated symbol : XGPackaging specifications Inner circuit Package Taping(6) (5) (4)Type Code

 0.1. Size:540K  ruichips
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RUQ050N02

1.5V Drive Nch MOSFET RUQ050N02 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT6Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) 1.5V drive ApplicationsSwitching Each lead has same dimensions Abbreviated symbol : XGPackaging specifications Inner circuit Package Taping(6) (5) (4)Type Code

 0.2. Size:1854K  ruichips
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RUQ050N02

AEC-Q101 Qualified1.5V Drive Nch MOSFET RUQ050N02RUQ050N02FRAStructure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT6Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) 1.5V drive ApplicationsSwitching Each lead has same dimensionsAbbreviated symbol : XGPackaging specificationsInner circuitPackage T

Datasheet: RUE002N02 , RUE002N05 , RUF015N02 , RUF020N02 , RUF025N02 , RUL035N02 , RUM002N02 , RUM002N05 , IRF9640 , RUR020N02 , RUR040N02 , RUU002N05 , RVQ040N05 , RW1A013ZP , RW1A020ZP , RW1A025AP , RW1A030AP .

History: IRF7739L1 | DMP3020LSS

Keywords - RUQ050N02 MOSFET datasheet

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