All MOSFET. RUR020N02 Datasheet

 

RUR020N02 Datasheet and Replacement


   Type Designator: RUR020N02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: TSMT3
 

 RUR020N02 substitution

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RUR020N02 Datasheet (PDF)

 ..1. Size:229K  rohm
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RUR020N02

1.5V Drive Nch MOSFET RUR020N02 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT3 Features 1) 1.5V drive 2) Low On-resistance. 3) Built-in G-S Protection Diode. Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : XK (3) Drain Applications Switching Packaging specifications Inner circuit Pac

 0.1. Size:598K  ruichips
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RUR020N02

RUR020N02 Nch 20V 2A Power MOSFET DatasheetlOutlineVDSS TSMT3 20V(3) RDS(on) (Max.)105mWID2A(1) PD1W(2) lFeatures lInner circuit(1) Gate 1) Low on - resistance.(2) Source 2) Built-in G-S Protection Diode.(3) Drain 3) Small Surface Mount Package (TSMT3).4) Pb-free lead plating ; RoHS compliant1 ESD PROTECTION DIODE 2 BODY DIODE lPackaging spe

Datasheet: RUE002N05 , RUF015N02 , RUF020N02 , RUF025N02 , RUL035N02 , RUM002N02 , RUM002N05 , RUQ050N02 , EMB04N03H , RUR040N02 , RUU002N05 , RVQ040N05 , RW1A013ZP , RW1A020ZP , RW1A025AP , RW1A030AP , RW1C015UN .

History: SUD08P06-155 | SI4435DY | SSA50R140S | RU1L002SN | IRF7752 | AP9997AGH | IRF7303Q

Keywords - RUR020N02 MOSFET datasheet

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