RVQ040N05 Datasheet and Replacement
Type Designator: RVQ040N05
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 21 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
Package: TSMT6
RVQ040N05 substitution
RVQ040N05 Datasheet (PDF)
rvq040n05.pdf

4V Drive Nch MOSFET RVQ040N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space savingsmall surface mount package (TSMT6). 0~0.1 (1) (2) (3)1pin mark0.160.4Each lead has same dimensions Applications Abbreviated symbol : QGSwitching Packaging specif
rvq040n05tr.pdf

RVQ040N05 Nch 45V 4A Power MOSFET DatasheetlOutline(6) VDSS TSMT6 45V(5) (4) RDS(on) (Max.)53mW(1) ID4A(2) PD1.25W(3) lFeatures lInner circuit(1) Drain 1) Low on - resistance.(2) Drain 2) Built-in G-S Protection Diode.(3) Gate (4) Source 3) Small Surface Mount Package (TSMT6).(5) Drain (6) Drain 4) Pb-free lead plating ; RoHS compliant*1 E
Datasheet: RUF025N02 , RUL035N02 , RUM002N02 , RUM002N05 , RUQ050N02 , RUR020N02 , RUR040N02 , RUU002N05 , AO4468 , RW1A013ZP , RW1A020ZP , RW1A025AP , RW1A030AP , RW1C015UN , RW1C020UN , RW1C025ZP , RW1E014SN .
History: 2SK3541MGP | STL70N10F3 | SFS12R08PNF | NTHS4101PT1G | FDZ375P | 2SK538
Keywords - RVQ040N05 MOSFET datasheet
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History: 2SK3541MGP | STL70N10F3 | SFS12R08PNF | NTHS4101PT1G | FDZ375P | 2SK538



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