RVQ040N05 PDF and Equivalents Search

 

RVQ040N05 Specs and Replacement

Type Designator: RVQ040N05

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 21 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm

Package: TSMT6

RVQ040N05 substitution

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RVQ040N05 datasheet

 ..1. Size:208K  rohm
rvq040n05.pdf pdf_icon

RVQ040N05

4V Drive Nch MOSFET RVQ040N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance. 2) Space saving small surface mount package (TSMT6). 0 0.1 (1) (2) (3) 1pin mark 0.16 0.4 Each lead has same dimensions Applications Abbreviated symbol QG Switching Packaging specif... See More ⇒

 0.1. Size:604K  rohm
rvq040n05tr.pdf pdf_icon

RVQ040N05

RVQ040N05 Nch 45V 4A Power MOSFET Datasheet lOutline (6) VDSS TSMT6 45V (5) (4) RDS(on) (Max.) 53mW (1) ID 4A (2) PD 1.25W (3) lFeatures lInner circuit (1) Drain 1) Low on - resistance. (2) Drain 2) Built-in G-S Protection Diode. (3) Gate (4) Source 3) Small Surface Mount Package (TSMT6). (5) Drain (6) Drain 4) Pb-free lead plating ; RoHS compliant *1 E... See More ⇒

Detailed specifications: RUF025N02, RUL035N02, RUM002N02, RUM002N05, RUQ050N02, RUR020N02, RUR040N02, RUU002N05, AOD4184A, RW1A013ZP, RW1A020ZP, RW1A025AP, RW1A030AP, RW1C015UN, RW1C020UN, RW1C025ZP, RW1E014SN

Keywords - RVQ040N05 MOSFET specs

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