RVQ040N05 Specs and Replacement
Type Designator: RVQ040N05
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 21 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
Package: TSMT6
RVQ040N05 substitution
- MOSFET ⓘ Cross-Reference Search
RVQ040N05 datasheet
rvq040n05.pdf
4V Drive Nch MOSFET RVQ040N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance. 2) Space saving small surface mount package (TSMT6). 0 0.1 (1) (2) (3) 1pin mark 0.16 0.4 Each lead has same dimensions Applications Abbreviated symbol QG Switching Packaging specif... See More ⇒
rvq040n05tr.pdf
RVQ040N05 Nch 45V 4A Power MOSFET Datasheet lOutline (6) VDSS TSMT6 45V (5) (4) RDS(on) (Max.) 53mW (1) ID 4A (2) PD 1.25W (3) lFeatures lInner circuit (1) Drain 1) Low on - resistance. (2) Drain 2) Built-in G-S Protection Diode. (3) Gate (4) Source 3) Small Surface Mount Package (TSMT6). (5) Drain (6) Drain 4) Pb-free lead plating ; RoHS compliant *1 E... See More ⇒
Detailed specifications: RUF025N02, RUL035N02, RUM002N02, RUM002N05, RUQ050N02, RUR020N02, RUR040N02, RUU002N05, AOD4184A, RW1A013ZP, RW1A020ZP, RW1A025AP, RW1A030AP, RW1C015UN, RW1C020UN, RW1C025ZP, RW1E014SN
Keywords - RVQ040N05 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: KIA10N80H-220F | 2SK3913-01MR
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