All MOSFET. RVQ040N05 Datasheet

 

RVQ040N05 Datasheet and Replacement


   Type Designator: RVQ040N05
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 21 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: TSMT6
 

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RVQ040N05 Datasheet (PDF)

 ..1. Size:208K  rohm
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RVQ040N05

4V Drive Nch MOSFET RVQ040N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT61.0MAX2.90.851.9 Features 0.95 0.95 0.7(6) (5) (4)1) Low On-resistance. 2) Space savingsmall surface mount package (TSMT6). 0~0.1 (1) (2) (3)1pin mark0.160.4Each lead has same dimensions Applications Abbreviated symbol : QGSwitching Packaging specif

 0.1. Size:604K  rohm
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RVQ040N05

RVQ040N05 Nch 45V 4A Power MOSFET DatasheetlOutline(6) VDSS TSMT6 45V(5) (4) RDS(on) (Max.)53mW(1) ID4A(2) PD1.25W(3) lFeatures lInner circuit(1) Drain 1) Low on - resistance.(2) Drain 2) Built-in G-S Protection Diode.(3) Gate (4) Source 3) Small Surface Mount Package (TSMT6).(5) Drain (6) Drain 4) Pb-free lead plating ; RoHS compliant*1 E

Datasheet: RUF025N02 , RUL035N02 , RUM002N02 , RUM002N05 , RUQ050N02 , RUR020N02 , RUR040N02 , RUU002N05 , HY1906P , RW1A013ZP , RW1A020ZP , RW1A025AP , RW1A030AP , RW1C015UN , RW1C020UN , RW1C025ZP , RW1E014SN .

History: APT51M50J | BSF077N06NT3G | AOW284 | AON6912A | UT9435HG-AA3-R | P0765GTF | HGN110N10SL

Keywords - RVQ040N05 MOSFET datasheet

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