RW1A013ZP PDF and Equivalents Search

 

RW1A013ZP Specs and Replacement

Type Designator: RW1A013ZP

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 1.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 28 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: WEMT6

RW1A013ZP substitution

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RW1A013ZP datasheet

 ..1. Size:203K  rohm
 rw1a013zp.pdf pdf_icon

RW1A013ZP

1.5V Drive Pch MOSFET RW1A013ZP Structure Dimensions (Unit mm) Silicon P-channel MOSFET WEMT6 (6) (5) (4) Features 1) Low on-resistance. 2) High power package. (1) (2) (3) 3) Low voltage drive. (1.5V) Abbreviated symbol XC Application Inner circuit Switching (6) (5) (4) 2 Packaging specifications 1 Package Taping Type Code T2R (1) Drain Basic orderi... See More ⇒

 9.1. Size:1126K  rohm
 rw1a025ap.pdf pdf_icon

RW1A013ZP

Data Sheet 1.5V Drive Pch MOSFET RW1A025AP Structure Dimensions (Unit mm) Silicon P-channel MOSFET WEMT6 (6) (5) (4) Features 1) Low On-resistance. 2) Small high power package. (1) (2) (3) 3) Low voltage drive.(1.5V) Abbreviated symbol SD Application Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code T2CR 2 Ba... See More ⇒

 9.2. Size:1127K  rohm
 rw1a030ap.pdf pdf_icon

RW1A013ZP

Data Sheet 1.5V Drive Pch MOSFET RW1A030AP Structure Dimensions (Unit mm) Silicon P-channel MOSFET WEMT6 (6) (5) (4) Features 1) Low On-resistance. 2) Small high power package. (1) (2) (3) 3) Low voltage drive.(1.5V) Abbreviated symbol SB Application Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code T2CR 2 Bas... See More ⇒

 9.3. Size:224K  rohm
 rw1a020zp.pdf pdf_icon

RW1A013ZP

1.5V Drive Pch MOSFET RW1A020ZP Structure Dimensions (Unit mm) WEMT6 Silicon P-channel MOSFET (6) (5) (4) Features 1) Low on-resistance. (1) (2) (3) 2) High power package. 3) Low voltage drive. (1.5V) Abbreviated symbol ZE Applications Inner circuit Switching (6) (5) (4) 2 Packaging specifications Package Taping 1 Type Code T2R (1) Drain Basic or... See More ⇒

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Detailed specifications: RUL035N02, RUM002N02, RUM002N05, RUQ050N02, RUR020N02, RUR040N02, RUU002N05, RVQ040N05, AO4407A, RW1A020ZP, RW1A025AP, RW1A030AP, RW1C015UN, RW1C020UN, RW1C025ZP, RW1E014SN, RW1E015RP

Keywords - RW1A013ZP MOSFET specs

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