All MOSFET. RW1A013ZP Datasheet

 

RW1A013ZP Datasheet and Replacement


   Type Designator: RW1A013ZP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 1.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 28 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: WEMT6
 

 RW1A013ZP substitution

   - MOSFET ⓘ Cross-Reference Search

 

RW1A013ZP Datasheet (PDF)

 ..1. Size:203K  rohm
rw1a013zp.pdf pdf_icon

RW1A013ZP

1.5V Drive Pch MOSFET RW1A013ZP Structure Dimensions (Unit : mm) Silicon P-channel MOSFET WEMT6(6) (5) (4) Features 1) Low on-resistance. 2) High power package. (1) (2) (3)3) Low voltage drive. (1.5V) Abbreviated symbol : XC Application Inner circuit Switching (6) (5) (4)2 Packaging specifications 1Package TapingType Code T2R(1) DrainBasic orderi

 9.1. Size:1126K  rohm
rw1a025ap.pdf pdf_icon

RW1A013ZP

Data Sheet1.5V Drive Pch MOSFET RW1A025AP Structure Dimensions (Unit : mm)Silicon P-channel MOSFETWEMT6(6) (5) (4)Features1) Low On-resistance.2) Small high power package.(1) (2) (3)3) Low voltage drive.(1.5V)Abbreviated symbol : SD ApplicationSwitching Packaging specifications Inner circuit(6) (5) (4)Package TapingType Code T2CR2Ba

 9.2. Size:1127K  rohm
rw1a030ap.pdf pdf_icon

RW1A013ZP

Data Sheet1.5V Drive Pch MOSFETRW1A030AP Structure Dimensions (Unit : mm)Silicon P-channel MOSFETWEMT6(6) (5) (4)Features1) Low On-resistance.2) Small high power package.(1) (2) (3)3) Low voltage drive.(1.5V)Abbreviated symbol : SB ApplicationSwitching Packaging specifications Inner circuit(6) (5) (4)Package TapingType Code T2CR2Bas

 9.3. Size:224K  rohm
rw1a020zp.pdf pdf_icon

RW1A013ZP

1.5V Drive Pch MOSFET RW1A020ZP Structure Dimensions (Unit : mm) WEMT6Silicon P-channel MOSFET (6) (5) (4) Features 1) Low on-resistance. (1) (2) (3)2) High power package. 3) Low voltage drive. (1.5V) Abbreviated symbol : ZE Applications Inner circuit Switching (6) (5) (4)2 Packaging specifications Package Taping1Type Code T2R(1) DrainBasic or

Datasheet: RUL035N02 , RUM002N02 , RUM002N05 , RUQ050N02 , RUR020N02 , RUR040N02 , RUU002N05 , RVQ040N05 , AO3407 , RW1A020ZP , RW1A025AP , RW1A030AP , RW1C015UN , RW1C020UN , RW1C025ZP , RW1E014SN , RW1E015RP .

History: SIHFBF30S | BL3N90-U | AK7N60S | BSC019N04LS | NCE65N1K2R | PT530BA | G2304

Keywords - RW1A013ZP MOSFET datasheet

 RW1A013ZP cross reference
 RW1A013ZP equivalent finder
 RW1A013ZP lookup
 RW1A013ZP substitution
 RW1A013ZP replacement

 

 
Back to Top

 


 
.