RW1E014SN Specs and Replacement
Type Designator: RW1E014SN
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 15 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
Package: WEMT6
RW1E014SN substitution
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RW1E014SN datasheet
rw1e014sn.pdf
4V Drive Nch MOSFET RW1E014SN Structure Dimensions (Unit mm) Silicon N-channel MOSFET WEMT6 (6) (5) (4) Features 1) Low On-resistance, High speed switching. 2) Built-in G-S Protection Diode. 3) Space Saving, Small Surface Mount Package (WEMT6). (1) (2) (3) Applications Abbreviated symbol PN Switching Packaging specifications Inner circuit Package Taping (6) ... See More ⇒
rw1e015rp.pdf
4V Drive Pch MOSFET RW1E015RP Structure Dimensions (Unit mm) WEMT6 Silicon P-channel MOSFET (6) (5) (4) Features 1) Low on-resistance. 2) Space saving, high power package. 3) Low voltage drive. (4V) (1) (2) (3) Applications Abbreviated symbol UJ Switching Inner circuit (6) (5) (4) Packaging specifications Package Taping 2 Type Code T2R 1 Basic orde... See More ⇒
rw1e025rp.pdf
Data Sheet 4V Drive Pch MOSFET RW1E025RP Structure Dimensions (Unit mm) Silicon P-channel MOSFET WEMT6 (6) (5) (4) Features 1) Low On-resistance. 2) Small high power package. (1) (2) (3) 3) Low voltage drive.(4V) Abbreviated symbol UT Application Switching Packaging specifications Inner circuit Package Taping (6) (5) (4) Type Code T2CR 2 Basic o... See More ⇒
Detailed specifications: RVQ040N05, RW1A013ZP, RW1A020ZP, RW1A025AP, RW1A030AP, RW1C015UN, RW1C020UN, RW1C025ZP, IRF740, RW1E015RP, RW1E025RP, RXH070N03, RXH090N03, RXH100N03, RXH125N03, RXQ040N03, RXR035N03
Keywords - RW1E014SN MOSFET specs
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