All MOSFET. RW1E014SN Datasheet

 

RW1E014SN Datasheet and Replacement


   Type Designator: RW1E014SN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: WEMT6
 

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RW1E014SN Datasheet (PDF)

 ..1. Size:176K  rohm
rw1e014sn.pdf pdf_icon

RW1E014SN

4V Drive Nch MOSFET RW1E014SN Structure Dimensions (Unit : mm) Silicon N-channel MOSFET WEMT6(6) (5) (4) Features 1) Low On-resistance, High speed switching. 2) Built-in G-S Protection Diode. 3) Space Saving, Small Surface Mount Package (WEMT6). (1) (2) (3) Applications Abbreviated symbol : PNSwitching Packaging specifications Inner circuit Package Taping(6)

 8.1. Size:221K  rohm
rw1e015rp.pdf pdf_icon

RW1E014SN

4V Drive Pch MOSFET RW1E015RP Structure Dimensions (Unit : mm) WEMT6Silicon P-channel MOSFET (6) (5) (4) Features 1) Low on-resistance. 2) Space saving, high power package. 3) Low voltage drive. (4V) (1) (2) (3) Applications Abbreviated symbol : UJSwitching Inner circuit (6) (5) (4) Packaging specifications Package Taping 2Type Code T2R1Basic orde

 9.1. Size:1138K  rohm
rw1e025rp.pdf pdf_icon

RW1E014SN

Data Sheet4V Drive Pch MOSFET RW1E025RP Structure Dimensions (Unit : mm)Silicon P-channel MOSFETWEMT6(6) (5) (4)Features1) Low On-resistance.2) Small high power package.(1) (2) (3)3) Low voltage drive.(4V)Abbreviated symbol : UT ApplicationSwitching Packaging specifications Inner circuitPackage Taping (6) (5) (4)Type Code T2CR2Basic o

Datasheet: RVQ040N05 , RW1A013ZP , RW1A020ZP , RW1A025AP , RW1A030AP , RW1C015UN , RW1C020UN , RW1C025ZP , IRF740 , RW1E015RP , RW1E025RP , RXH070N03 , RXH090N03 , RXH100N03 , RXH125N03 , RXQ040N03 , RXR035N03 .

History: PE532DY | OSG60R1K8PF

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