All MOSFET. RXH125N03 Datasheet

 

RXH125N03 Datasheet and Replacement


   Type Designator: RXH125N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 340 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: SOP8
 

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RXH125N03 Datasheet (PDF)

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RXH125N03

Data Sheet4V Drive Nch MOSFETRXH125N03 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET SOP8(8) (5)Features1) Low on-resistance.2) Built-in G-S Protection Diode.(1) (4)3) Small Surface Mount Package (SOP8). ApplicationSwitching Packaging specifications Inner circuit(8) (7) (6) (5)Package TapingTypeCode TBBasic ordering unit (pieces

Datasheet: RW1C020UN , RW1C025ZP , RW1E014SN , RW1E015RP , RW1E025RP , RXH070N03 , RXH090N03 , RXH100N03 , IRF640 , RXQ040N03 , RXR035N03 , RYC002N05 , RYE002N05 , RYM002N05 , RYU002N05 , RZE002P02 , RZF013P01 .

History: IXTL2X180N10T | HGW190N15SL | SE40150 | OSG65R099HZF | ZXMP6A17GQ | RUM001L02 | AFN3460

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