RXH125N03 PDF and Equivalents Search

 

RXH125N03 Specs and Replacement

Type Designator: RXH125N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 340 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: SOP8

RXH125N03 substitution

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RXH125N03 datasheet

 ..1. Size:1138K  rohm
 rxh125n03.pdf pdf_icon

RXH125N03

Data Sheet 4V Drive Nch MOSFET RXH125N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET SOP8 (8) (5) Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. (1) (4) 3) Small Surface Mount Package (SOP8). Application Switching Packaging specifications Inner circuit (8) (7) (6) (5) Package Taping Type Code TB Basic ordering unit (pieces... See More ⇒

Detailed specifications: RW1C020UN, RW1C025ZP, RW1E014SN, RW1E015RP, RW1E025RP, RXH070N03, RXH090N03, RXH100N03, IRFP460, RXQ040N03, RXR035N03, RYC002N05, RYE002N05, RYM002N05, RYU002N05, RZE002P02, RZF013P01

Keywords - RXH125N03 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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