All MOSFET. RZF020P01 Datasheet

 

RZF020P01 Datasheet and Replacement


   Type Designator: RZF020P01
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: TUMT3
 

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RZF020P01 Datasheet (PDF)

 ..1. Size:229K  rohm
 rzf020p01.pdf pdf_icon

RZF020P01

1.5V Drive Pch MOSFET RZF020P01 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TUMT3 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TUMT3). 4) Low voltage drive (1.5V). (1) Gate(2) SourceAbbreviated symbol : ZE(3) Drain Applications Inner circuit Switching (3) Packaging specifications 2P

 0.1. Size:228K  rohm
 rzf020p01tl.pdf pdf_icon

RZF020P01

1.5V Drive Pch MOSFET RZF020P01 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TUMT3 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TUMT3). 4) Low voltage drive (1.5V). (1) Gate(2) SourceAbbreviated symbol : ZE(3) Drain Applications Inner circuit Switching (3) Packaging specifications 2P

Datasheet: RXQ040N03 , RXR035N03 , RYC002N05 , RYE002N05 , RYM002N05 , RYU002N05 , RZE002P02 , RZF013P01 , AON6414A , RZF030P01 , RZM002P02 , RZQ050P01 , RZR020P01 , RZR025P01 , RZR040P01 , ZDS020N60 , ZDX130N50 .

History: SWD085R68E7T

Keywords - RZF020P01 MOSFET datasheet

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