RZF020P01 PDF and Equivalents Search

 

RZF020P01 Specs and Replacement

Type Designator: RZF020P01

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: TUMT3

RZF020P01 substitution

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RZF020P01 datasheet

 ..1. Size:229K  rohm
 rzf020p01.pdf pdf_icon

RZF020P01

1.5V Drive Pch MOSFET RZF020P01 Structure Dimensions (Unit mm) Silicon P-channel MOSFET TUMT3 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TUMT3). 4) Low voltage drive (1.5V). (1) Gate (2) Source Abbreviated symbol ZE (3) Drain Applications Inner circuit Switching (3) Packaging specifications 2 P... See More ⇒

 0.1. Size:228K  rohm
 rzf020p01tl.pdf pdf_icon

RZF020P01

1.5V Drive Pch MOSFET RZF020P01 Structure Dimensions (Unit mm) Silicon P-channel MOSFET TUMT3 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TUMT3). 4) Low voltage drive (1.5V). (1) Gate (2) Source Abbreviated symbol ZE (3) Drain Applications Inner circuit Switching (3) Packaging specifications 2 P... See More ⇒

Detailed specifications: RXQ040N03, RXR035N03, RYC002N05, RYE002N05, RYM002N05, RYU002N05, RZE002P02, RZF013P01, IRFB4227, RZF030P01, RZM002P02, RZQ050P01, RZR020P01, RZR025P01, RZR040P01, ZDS020N60, ZDX130N50

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