RZR020P01 Datasheet and Replacement
Type Designator: RZR020P01
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 75 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: TSMT3
RZR020P01 substitution
RZR020P01 Datasheet (PDF)
rzr020p01.pdf

1.5V Drive Pch MOSFET RZR020P01 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT31.0MAX2.90.850.4 0.7(3) Features 1) Low on-resistance. (1) (2)2) Built-in G-S Protection Diode. 0.95 0.950.161.93) Small and Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions4) Low voltage drive (1.5V). (2) SourceAbbreviated symbol : ZE
rzr025p01.pdf

RZR025P01 Transistors 1.5V Drive Pch MOSFET RZR025P01 Dimensions (Unit : mm) Features 1) Low On-resistance. TSMT31.0MAX2) Built-in G-S Protection Diode. 2.90.853) Small and Surface Mount Package (TSMT3). 0.4 0.74) Low voltage drive (1.5V). (3)( ) ( )1 20.95 0.95 Application 0.161.9Switching (1) Gate Each lead has same dimensions(2) SourceAbbrevi
Datasheet: RYM002N05 , RYU002N05 , RZE002P02 , RZF013P01 , RZF020P01 , RZF030P01 , RZM002P02 , RZQ050P01 , AON6414A , RZR025P01 , RZR040P01 , ZDS020N60 , ZDX130N50 , KP214A9 , KP501A , KP501B , KP501V .
History: SUM110N06-3M9H | 2SK3985-01 | AON2812 | S-LP2307LT1G | ISP80N08S2L | RU40S4H | TPHR9003NL
Keywords - RZR020P01 MOSFET datasheet
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History: SUM110N06-3M9H | 2SK3985-01 | AON2812 | S-LP2307LT1G | ISP80N08S2L | RU40S4H | TPHR9003NL



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