C2T212 Datasheet and Replacement

   Type Designator: C2T212
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 27 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 35 V
   |Id| ⓘ - Maximum Drain Current: 0.05 A
   Tj ⓘ - Maximum Junction Temperature: 200 °C
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 100 Ohm
   Package: MACROH
     - MOSFET ⓘ Cross-Reference Search