C2T212 Specs and Replacement

Type Designator: C2T212

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 27 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 35 V

|Id| ⓘ - Maximum Drain Current: 0.05 A

Tj ⓘ - Maximum Junction Temperature: 200 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 100 Ohm

Package: MACROH

C2T212 substitution

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C2T212 datasheet

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C2T212

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Detailed specifications: BUZ908P, BUZ90A, BUZ92, BUZ94, C2T204, C2T205, C2T206, C2T211, AO4468, C2T213, C2T225, C2T225A, DM601, DM616, ECG221, ECG454, ECG455

Keywords - C2T212 MOSFET specs

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