PT8205A MOSFET. Datasheet pdf. Equivalent
Type Designator: PT8205A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1.4 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Drain Current |Id|: 6 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 11 nS
Drain-Source Capacitance (Cd): 330 pF
Maximum Drain-Source On-State Resistance (Rds): 0.028 Ohm
Package: TSSOP8
PT8205A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PT8205A Datasheet (PDF)
1.1. pt8205a.pdf 
Size:2146K _htsemi
PT8205A 20V Dual N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 2.5V, Ids@ 5.2A = 38m? RDS(ON), Vgs@ 4.5V, Ids@ 6A = 28m? Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications 1 8 D1 D2 2 7 S1 S2 3 6 S1 S2 4 5 G1 G2 TSSOP-8 Millimete
4.1. pt8205.pdf Size:2427K _htsemi
PT8205 20V Dual N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@2.5V, Ids@3.4A 46m? RDS(ON), Vgs@4.V, Ids@4.3A ? 30m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications Package Dimensions SOT-163 Millimeter Millimeter REF. REF. Min. Ma
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