All MOSFET. PT8205A Datasheet

 

PT8205A Datasheet and Replacement


   Type Designator: PT8205A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: TSSOP8
 

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PT8205A Datasheet (PDF)

 ..1. Size:2146K  htsemi
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PT8205A

PT8205A20V Dual N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 2.5V, Ids@ 5.2A = 38m RDS(ON), Vgs@ 4.5V, Ids@ 6A = 28m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications 1 8D1 D22 7S1S23 6S1 S24 5G1 G2TSSOP-8Mi

 8.1. Size:2427K  htsemi
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PT8205A

PT820520V Dual N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@2.5V, Ids@3.4A 46m RDS(ON), Vgs@4.V, Ids@4.3A 30mFeatures Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications Package Dimensions SOT-163Millimeter Millimeter REF. REF.

 8.2. Size:3645K  cn puolop
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PT8205A

PT8205 20V Dual N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 2.5V, Ids@ 5.2A = 24mRDS(ON), Vgs @ 4.5V, Ids @ 6A = 20mFeatures Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications Package Dimensions SOT-163(SOT-23-6L)Millimeter Millimet

Datasheet: 2P7234A , 2P7234A-5 , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , 13N50 , PT8822 , PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR , AO3401 , AO3407 .

History: FQPF14N30 | RJ1G12BGN | FHF15N60A

Keywords - PT8205A MOSFET datasheet

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