F5016H Specs and Replacement

Type Designator: F5016H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: TO220F5

F5016H substitution

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F5016H datasheet

 9.1. Size:40K  fuji
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F5016H

MOSFET / P wer MOSFETs MOSFET P wer MOSFET F T I F T VDSS ID ID (pulse) RDS (on) PD VGSS VGS (th) Device type Max. Typ. Package Net mass Volts Amps. Amps. Ohms ( ) Watts Volts Volts Grams F5018 40 8 - 0.14 15 - - K-pack 0.6 F5019 40 12 - 0.14 30 - - T-pack 1.6 F5020 40 3... See More ⇒

Detailed specifications: C2T225, C2T225A, DM601, DM616, ECG221, ECG454, ECG455, F5001H, IRFP460, F5017H, F5018, F5019, F5020, F5021H, F5022, F5023, F5026

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.