All MOSFET. F5016H Datasheet

 

F5016H Datasheet and Replacement


   Type Designator: F5016H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: TO220F5
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F5016H Datasheet (PDF)

 9.1. Size:40K  fuji
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F5016H

MOSFET / Pwer MOSFETs MOSFET Pwer MOSFET F TI F T VDSS ID ID (pulse) RDS (on) PD VGSS VGS (th) Device type Max. Typ. Package Net massVolts Amps. Amps. Ohms () Watts Volts Volts GramsF5018 40 8 - 0.14 15 - - K-pack 0.6F5019 40 12 - 0.14 30 - - T-pack 1.6F5020 40 3

Datasheet: C2T225 , C2T225A , DM601 , DM616 , ECG221 , ECG454 , ECG455 , F5001H , IRFP460 , F5017H , F5018 , F5019 , F5020 , F5021H , F5022 , F5023 , F5026 .

History: FC8V3303 | SMG1330N | PB555BA | UF3205G-TQ2-T | 2SK1994 | LSE55R140GF | SFP2955

Keywords - F5016H MOSFET datasheet

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