SDF920NE PDF and Equivalents Search

 

SDF920NE Specs and Replacement

Type Designator: SDF920NE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.3 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: DFN2X5

SDF920NE substitution

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SDF920NE datasheet

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SDF920NE

SDF920NE 11A, 20V, RDS(ON) 22 m Dual N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION DFN2x5 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applicat... See More ⇒

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SDF920NE

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SDF920NE

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Detailed specifications: U105D, 2N7002KDW, S2N7002, S2N7002DW, S2N7002K, S2N7002KW, S2N7002W, SCG3019, IRFB7545, SDN520C, SFN423P, SGM0410S, SGM2305A, SGM2306A, SGM2310A, SGM3055, SID05N10

Keywords - SDF920NE MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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