SDF920NE Specs and Replacement
Type Designator: SDF920NE
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.3 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: DFN2X5
SDF920NE substitution
- MOSFET ⓘ Cross-Reference Search
SDF920NE datasheet
sdf920ne.pdf
SDF920NE 11A, 20V, RDS(ON) 22 m Dual N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION DFN2x5 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applicat... See More ⇒
Detailed specifications: U105D, 2N7002KDW, S2N7002, S2N7002DW, S2N7002K, S2N7002KW, S2N7002W, SCG3019, IRFB7545, SDN520C, SFN423P, SGM0410S, SGM2305A, SGM2306A, SGM2310A, SGM3055, SID05N10
Keywords - SDF920NE MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: ISA07N65A | CPC3720 | 1H10
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