SDF920NE Datasheet and Replacement
Type Designator: SDF920NE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 2.3 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: DFN2X5
SDF920NE substitution
SDF920NE Datasheet (PDF)
sdf920ne.pdf
SDF920NE 11A, 20V, RDS(ON) 22 mDual N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION DFN2x5 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applicat
Datasheet: U105D , 2N7002KDW , S2N7002 , S2N7002DW , S2N7002K , S2N7002KW , S2N7002W , SCG3019 , IRFB7545 , SDN520C , SFN423P , SGM0410S , SGM2305A , SGM2306A , SGM2310A , SGM3055 , SID05N10 .
History: L2SK3018WT1G | L2N7002WT1G | AOD417 | AOD4189 | SI4N60-TN3-R | L2N7002LT1G
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: L2SK3018WT1G | L2N7002WT1G | AOD417 | AOD4189 | SI4N60-TN3-R | L2N7002LT1G
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