All MOSFET. SDN520C Datasheet

 

SDN520C Datasheet and Replacement


   Type Designator: SDN520C
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 6.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 15 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
   Package: DFN2X26L
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SDN520C Datasheet (PDF)

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SDN520C

SDN520C N-Ch: 4.5 A, 20 V, RDS(ON) 58 m P-Ch: -4.5 A, -20 V, RDS(ON) 112 m Elektronische Bauelemente N & P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of -C specifies halogen and lead-free DFN2x2-6L DESCRIPTION These miniature surface mount MOSFETs utilize a high cell Density trench process to provide low RDS(on)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: WMM11N80M3 | FDMS9620S | AM2314NE | RFP2N10L | IRFI7536G

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