SDN520C Specs and Replacement
Type Designator: SDN520C
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 6.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
Package: DFN2X26L
SDN520C substitution
- MOSFET ⓘ Cross-Reference Search
SDN520C datasheet
sdn520c.pdf
SDN520C N-Ch 4.5 A, 20 V, RDS(ON) 58 m P-Ch -4.5 A, -20 V, RDS(ON) 112 m Elektronische Bauelemente N & P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of -C specifies halogen and lead-free DFN2x2-6L DESCRIPTION These miniature surface mount MOSFETs utilize a high cell Density trench process to provide low RDS(on) ... See More ⇒
Detailed specifications: 2N7002KDW, S2N7002, S2N7002DW, S2N7002K, S2N7002KW, S2N7002W, SCG3019, SDF920NE, AON7403, SFN423P, SGM0410S, SGM2305A, SGM2306A, SGM2310A, SGM3055, SID05N10, SID10N30-600I
Keywords - SDN520C MOSFET specs
SDN520C cross reference
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SDN520C replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: RSU002P03 | R6002END | 1H10 | ISA07N65A | CPC3720
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