SDN520C Datasheet and Replacement
Type Designator: SDN520C
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 6.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
Package: DFN2X26L
SDN520C substitution
SDN520C Datasheet (PDF)
sdn520c.pdf

SDN520C N-Ch: 4.5 A, 20 V, RDS(ON) 58 m P-Ch: -4.5 A, -20 V, RDS(ON) 112 m Elektronische Bauelemente N & P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of -C specifies halogen and lead-free DFN2x2-6L DESCRIPTION These miniature surface mount MOSFETs utilize a high cell Density trench process to provide low RDS(on)
Datasheet: 2N7002KDW , S2N7002 , S2N7002DW , S2N7002K , S2N7002KW , S2N7002W , SCG3019 , SDF920NE , EMB04N03H , SFN423P , SGM0410S , SGM2305A , SGM2306A , SGM2310A , SGM3055 , SID05N10 , SID10N30-600I .
History: QM10N60F | QM0006G | 20N65 | IXTZ35N25MB | 2SK2153 | 2SK1636L | SI6433BDQ
Keywords - SDN520C MOSFET datasheet
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History: QM10N60F | QM0006G | 20N65 | IXTZ35N25MB | 2SK2153 | 2SK1636L | SI6433BDQ



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