2N6802JANTXV PDF Specs and Replacement
Type Designator: 2N6802JANTXV
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Id| ⓘ - Maximum Drain Current: 3.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 900 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO205AF
2N6802JANTXV substitution
2N6802JANTXV PDF Specs
2n6802u.pdf
PD - 91719B IRFE430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6802U HEXFET TRANSISTORS JANTXV2N6802U SURFACE MOUNT (LCC-18) [REF MIL-PRF-19500/557] 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFE430 500V 1.50 2.5A LCC-18 The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface mount technology. Desinged ... See More ⇒
2n6802 irff430.pdf
PD -90433C IRFF430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6802 HEXFET TRANSISTORS JANTXV2N6802 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/557 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF430 500V 1.5 2.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing ... See More ⇒
2n6796 2n6798 2n6800 2n6802.pdf
2N6796, JANTX2N6796 JANTXV2N6796 2N6800, JANTX2N6800, JANTXV2N6800 2N6798, JANTX2N6798 JANTXV2N6798 2N6802, JANTX2N6802, JANTXV2N6802 JANTX, JANTXV POWER MOSFET IN TO-205 AF PACKAGE, QUALIFIED TO MIL-PRF-19500/557 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor FEATURES Low RDS(on) Ease of Paralleling Qualified to MIL-PRF-19500/557 DESCRIPTIO... See More ⇒
Detailed specifications: 2N6800JANTX , 2N6800JANTXV , 2N6800SM , 2N6801 , 2N6801LCC4 , 2N6801-SM , 2N6802 , 2N6802JANTX , IRF1407 , 2N6802SM , 2N6823 , 2N6826 , 2N6845 , 2N6847 , 2N6849 , 2N6849L , 2N6851 .
Keywords - 2N6802JANTXV MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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