All MOSFET. SID9435 Datasheet

 

SID9435 Datasheet and Replacement


   Type Designator: SID9435
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 187 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: TO251
 

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SID9435 Datasheet (PDF)

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SID9435

SID9435-20A, -30V,RDS(ON)50m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductTO-251Description2.30.16.60.25.30.2 0.50.05The SID9435 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.7.00.25.60.2The TO-251 is univ

Datasheet: SGM2306A , SGM2310A , SGM3055 , SID05N10 , SID10N30-600I , SID20N06-90I , SID3055 , SID40N03 , IRF3205 , SID9575 , SID9971 , SJV01N60 , SMG1330N , SMG2301 , SMG2301P , SMG2302 , SMG2302N .

Keywords - SID9435 MOSFET datasheet

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