SID9435 PDF and Equivalents Search

 

SID9435 Specs and Replacement

Type Designator: SID9435

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 187 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: TO251

SID9435 substitution

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SID9435 datasheet

 ..1. Size:667K  secos
 sid9435.pdf pdf_icon

SID9435

SID9435 -20A, -30V,RDS(ON)50m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product TO-251 Description 2.3 0.1 6.6 0.2 5.3 0.2 0.5 0.05 The SID9435 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. 7.0 0.2 5.6 0.2 The TO-251 is univ... See More ⇒

Detailed specifications: SGM2306A, SGM2310A, SGM3055, SID05N10, SID10N30-600I, SID20N06-90I, SID3055, SID40N03, IRF3205, SID9575, SID9971, SJV01N60, SMG1330N, SMG2301, SMG2301P, SMG2302, SMG2302N

Keywords - SID9435 MOSFET specs

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