SID9435 Datasheet and Replacement
Type Designator: SID9435
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 187 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: TO251
SID9435 substitution
SID9435 Datasheet (PDF)
sid9435.pdf

SID9435-20A, -30V,RDS(ON)50m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductTO-251Description2.30.16.60.25.30.2 0.50.05The SID9435 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.7.00.25.60.2The TO-251 is univ
Datasheet: SGM2306A , SGM2310A , SGM3055 , SID05N10 , SID10N30-600I , SID20N06-90I , SID3055 , SID40N03 , IRF3205 , SID9575 , SID9971 , SJV01N60 , SMG1330N , SMG2301 , SMG2301P , SMG2302 , SMG2302N .
History: 2N6968JANTXV
Keywords - SID9435 MOSFET datasheet
SID9435 cross reference
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SID9435 replacement
History: 2N6968JANTXV



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