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SID9575 Specs and Replacement

Type Designator: SID9575

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: TO251

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SID9575 datasheet

 ..1. Size:1357K  secos
 sid9575.pdf pdf_icon

SID9575

SID9575 -15A , -60V , RDS(ON) 90 m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen-free TO-251 DESCRIPTION The SID9575 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES Simple Drive... See More ⇒

Detailed specifications: SGM2310A, SGM3055, SID05N10, SID10N30-600I, SID20N06-90I, SID3055, SID40N03, SID9435, IRF740, SID9971, SJV01N60, SMG1330N, SMG2301, SMG2301P, SMG2302, SMG2302N, SMG2305

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