All MOSFET. SID9575 Datasheet

 

SID9575 Datasheet and Replacement


   Type Designator: SID9575
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO251
 

 SID9575 substitution

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SID9575 Datasheet (PDF)

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SID9575

SID9575 -15A , -60V , RDS(ON) 90 m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen-free TO-251 DESCRIPTION The SID9575 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES Simple Drive

Datasheet: SGM2310A , SGM3055 , SID05N10 , SID10N30-600I , SID20N06-90I , SID3055 , SID40N03 , SID9435 , IRF740 , SID9971 , SJV01N60 , SMG1330N , SMG2301 , SMG2301P , SMG2302 , SMG2302N , SMG2305 .

History: 2SK1939-01 | SI4833DY

Keywords - SID9575 MOSFET datasheet

 SID9575 cross reference
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