SMG2310A Specs and Replacement
Type Designator: SMG2310A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
Qg ⓘ - Total Gate Charge: 4 nC
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 42 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
Package: SC59
SMG2310A substitution
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SMG2310A datasheet
smg2310a.pdf
SMG2310A N-Ch Enhancement Mode Power MOSFET 5.0 A, 60 V, RDS(ON)=115 m Elektronische Bauelemente sRoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTIONS A The SMG2310A utilized advanced processing techniques to achieve the L lowest possible on-resistance, extremely efficient and cost-effectiveness 3 3 device. The SMG2310A is univers... See More ⇒
smg2310n.pdf
SMG2310N 2.2A, 30V, RDS(ON) 65 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize High Cell A Density process. Low RDS(on) assures minimal power loss and L conserves energy, making this device ideal for use in power 3 3... See More ⇒
smg2318n.pdf
SMG2318N 1.2 A, 30 V, RDS(ON) 160 m N-Channel Logic Level MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to A L ensure minimal power loss and heat dissipation. 3 3 T... See More ⇒
smg2314ne.pdf
SMG2314NE 4 A, 20 V, RDS(ON) 32 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and A L conserves energy, making this device ideal for use in power ... See More ⇒
Detailed specifications: SMG2302, SMG2302N, SMG2305, SMG2305P, SMG2305PE, SMG2306A, SMG2306N, SMG2306NE, AO3400, SMG2310N, SMG2314N, SMG2314NE, SMG2318N, SMG2319P, SMG2321P, SMG2322N, SMG2325P
Keywords - SMG2310A MOSFET specs
SMG2310A cross reference
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History: APT50M65B2LLG | DMP4015SPSQ | IMW120R090M1H | CR4N65FA9K
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