SMG2310N PDF and Equivalents Search

 

SMG2310N Specs and Replacement

Type Designator: SMG2310N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 1 V

Qg ⓘ - Total Gate Charge: 7 nC

tr ⓘ - Rise Time: 11 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: SC59

SMG2310N substitution

- MOSFET ⓘ Cross-Reference Search

 

SMG2310N datasheet

 ..1. Size:705K  secos
smg2310n.pdf pdf_icon

SMG2310N

SMG2310N 2.2A, 30V, RDS(ON) 65 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize High Cell A Density process. Low RDS(on) assures minimal power loss and L conserves energy, making this device ideal for use in power 3 3... See More ⇒

 7.1. Size:900K  secos
smg2310a.pdf pdf_icon

SMG2310N

SMG2310A N-Ch Enhancement Mode Power MOSFET 5.0 A, 60 V, RDS(ON)=115 m Elektronische Bauelemente sRoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTIONS A The SMG2310A utilized advanced processing techniques to achieve the L lowest possible on-resistance, extremely efficient and cost-effectiveness 3 3 device. The SMG2310A is univers... See More ⇒

 8.1. Size:469K  secos
smg2318n.pdf pdf_icon

SMG2310N

SMG2318N 1.2 A, 30 V, RDS(ON) 160 m N-Channel Logic Level MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to A L ensure minimal power loss and heat dissipation. 3 3 T... See More ⇒

 8.2. Size:139K  secos
smg2314ne.pdf pdf_icon

SMG2310N

SMG2314NE 4 A, 20 V, RDS(ON) 32 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and A L conserves energy, making this device ideal for use in power ... See More ⇒

Detailed specifications: SMG2302N, SMG2305, SMG2305P, SMG2305PE, SMG2306A, SMG2306N, SMG2306NE, SMG2310A, IRFB4227, SMG2314N, SMG2314NE, SMG2318N, SMG2319P, SMG2321P, SMG2322N, SMG2325P, SMG2326N

Keywords - SMG2310N MOSFET specs

 SMG2310N cross reference

 SMG2310N equivalent finder

 SMG2310N pdf lookup

 SMG2310N substitution

 SMG2310N replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

↑ Back to Top
.