SMG2310N Specs and Replacement
Type Designator: SMG2310N
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 2.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 1 V
Qg ⓘ - Total Gate Charge: 7 nC
tr ⓘ - Rise Time: 11 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: SC59
SMG2310N substitution
- MOSFET ⓘ Cross-Reference Search
SMG2310N datasheet
smg2310n.pdf
SMG2310N 2.2A, 30V, RDS(ON) 65 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize High Cell A Density process. Low RDS(on) assures minimal power loss and L conserves energy, making this device ideal for use in power 3 3... See More ⇒
smg2310a.pdf
SMG2310A N-Ch Enhancement Mode Power MOSFET 5.0 A, 60 V, RDS(ON)=115 m Elektronische Bauelemente sRoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTIONS A The SMG2310A utilized advanced processing techniques to achieve the L lowest possible on-resistance, extremely efficient and cost-effectiveness 3 3 device. The SMG2310A is univers... See More ⇒
smg2318n.pdf
SMG2318N 1.2 A, 30 V, RDS(ON) 160 m N-Channel Logic Level MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to A L ensure minimal power loss and heat dissipation. 3 3 T... See More ⇒
smg2314ne.pdf
SMG2314NE 4 A, 20 V, RDS(ON) 32 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and A L conserves energy, making this device ideal for use in power ... See More ⇒
Detailed specifications: SMG2302N, SMG2305, SMG2305P, SMG2305PE, SMG2306A, SMG2306N, SMG2306NE, SMG2310A, IRFB4227, SMG2314N, SMG2314NE, SMG2318N, SMG2319P, SMG2321P, SMG2322N, SMG2325P, SMG2326N
Keywords - SMG2310N MOSFET specs
SMG2310N cross reference
SMG2310N equivalent finder
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SMG2310N substitution
SMG2310N replacement
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