SMG2319P PDF and Equivalents Search

 

SMG2319P Specs and Replacement

Type Designator: SMG2319P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: SC59

SMG2319P substitution

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SMG2319P datasheet

 ..1. Size:768K  secos
smg2319p.pdf pdf_icon

SMG2319P

SMG2319P -2.1A , -30V , RDS(ON) 200 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 The miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal A L power loss and conserves energy, making this 3 3 device ideal for use in power m... See More ⇒

 8.1. Size:469K  secos
smg2318n.pdf pdf_icon

SMG2319P

SMG2318N 1.2 A, 30 V, RDS(ON) 160 m N-Channel Logic Level MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to A L ensure minimal power loss and heat dissipation. 3 3 T... See More ⇒

 8.2. Size:900K  secos
smg2310a.pdf pdf_icon

SMG2319P

SMG2310A N-Ch Enhancement Mode Power MOSFET 5.0 A, 60 V, RDS(ON)=115 m Elektronische Bauelemente sRoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTIONS A The SMG2310A utilized advanced processing techniques to achieve the L lowest possible on-resistance, extremely efficient and cost-effectiveness 3 3 device. The SMG2310A is univers... See More ⇒

 8.3. Size:139K  secos
smg2314ne.pdf pdf_icon

SMG2319P

SMG2314NE 4 A, 20 V, RDS(ON) 32 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and A L conserves energy, making this device ideal for use in power ... See More ⇒

Detailed specifications: SMG2306A, SMG2306N, SMG2306NE, SMG2310A, SMG2310N, SMG2314N, SMG2314NE, SMG2318N, IRFB4115, SMG2321P, SMG2322N, SMG2325P, SMG2326N, SMG2327P, SMG2328, SMG2328NE, SMG2328S

Keywords - SMG2319P MOSFET specs

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