SMG2321P Datasheet. Specs and Replacement

Type Designator: SMG2321P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.079 Ohm

Package: SC59

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SMG2321P datasheet

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smg2321p.pdf pdf_icon

SMG2321P

SMG2321P -4.1A , -20V , RDS(ON) 79 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize A high cell density process. Low RDS(on) assures minimal L 3 power loss and conserves energy, making this device 3 Top View C B ideal for use... See More ⇒

 8.1. Size:489K  secos
smg2327p.pdf pdf_icon

SMG2321P

SMG2327P -3.6 A, -20 V, RDS(ON) 52 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 The miniature surface mount MOSFETs utilize high A cell density process.Low RDS(on) assures minimal power L 3 loss and conserves energy, making this device ideal for 3 use in power man... See More ⇒

 8.2. Size:621K  secos
smg2325p.pdf pdf_icon

SMG2321P

SMG2325P -3.6 A, -20 V, RDS(ON) 55 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure A L minimal power loss and heat dissipation. Typical applicati... See More ⇒

 8.3. Size:561K  secos
smg2322n.pdf pdf_icon

SMG2321P

SMG2322N 2.5A, 30V, RDS(ON) 85 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) A L and to ensure minimal power loss and heat dissipation. 3 3 Top View C B 1 1 2 ... See More ⇒

Detailed specifications: SMG2306N, SMG2306NE, SMG2310A, SMG2310N, SMG2314N, SMG2314NE, SMG2318N, SMG2319P, IRFB4227, SMG2322N, SMG2325P, SMG2326N, SMG2327P, SMG2328, SMG2328NE, SMG2328S, SMG2329P

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