SMG2321P PDF and Equivalents Search

 

SMG2321P Specs and Replacement


   Type Designator: SMG2321P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 4.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.079 Ohm
   Package: SC59
 

 SMG2321P substitution

   - MOSFET ⓘ Cross-Reference Search

 

SMG2321P datasheet

 ..1. Size:548K  secos
smg2321p.pdf pdf_icon

SMG2321P

SMG2321P -4.1A , -20V , RDS(ON) 79 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize A high cell density process. Low RDS(on) assures minimal L 3 power loss and conserves energy, making this device 3 Top View C B ideal for use... See More ⇒

 8.1. Size:489K  secos
smg2327p.pdf pdf_icon

SMG2321P

SMG2327P -3.6 A, -20 V, RDS(ON) 52 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 The miniature surface mount MOSFETs utilize high A cell density process.Low RDS(on) assures minimal power L 3 loss and conserves energy, making this device ideal for 3 use in power man... See More ⇒

 8.2. Size:621K  secos
smg2325p.pdf pdf_icon

SMG2321P

SMG2325P -3.6 A, -20 V, RDS(ON) 55 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure A L minimal power loss and heat dissipation. Typical applicati... See More ⇒

 8.3. Size:561K  secos
smg2322n.pdf pdf_icon

SMG2321P

SMG2322N 2.5A, 30V, RDS(ON) 85 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) A L and to ensure minimal power loss and heat dissipation. 3 3 Top View C B 1 1 2 ... See More ⇒

Detailed specifications: SMG2306N , SMG2306NE , SMG2310A , SMG2310N , SMG2314N , SMG2314NE , SMG2318N , SMG2319P , 2N7000 , SMG2322N , SMG2325P , SMG2326N , SMG2327P , SMG2328 , SMG2328NE , SMG2328S , SMG2329P .

History: HUFA76443P3 | IPI50R399CP

Keywords - SMG2321P MOSFET specs

 SMG2321P cross reference
 SMG2321P equivalent finder
 SMG2321P pdf lookup
 SMG2321P substitution
 SMG2321P replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 
Back to Top

 


 
.