SMG2327P Datasheet. Specs and Replacement
Type Designator: SMG2327P 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 3.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 130 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
Package: SC59
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SMG2327P substitution
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SMG2327P datasheet
smg2327p.pdf
SMG2327P -3.6 A, -20 V, RDS(ON) 52 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 The miniature surface mount MOSFETs utilize high A cell density process.Low RDS(on) assures minimal power L 3 loss and conserves energy, making this device ideal for 3 use in power man... See More ⇒
smg2321p.pdf
SMG2321P -4.1A , -20V , RDS(ON) 79 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize A high cell density process. Low RDS(on) assures minimal L 3 power loss and conserves energy, making this device 3 Top View C B ideal for use... See More ⇒
smg2325p.pdf
SMG2325P -3.6 A, -20 V, RDS(ON) 55 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure A L minimal power loss and heat dissipation. Typical applicati... See More ⇒
smg2322n.pdf
SMG2322N 2.5A, 30V, RDS(ON) 85 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) A L and to ensure minimal power loss and heat dissipation. 3 3 Top View C B 1 1 2 ... See More ⇒
Detailed specifications: SMG2314N, SMG2314NE, SMG2318N, SMG2319P, SMG2321P, SMG2322N, SMG2325P, SMG2326N, IRF630, SMG2328, SMG2328NE, SMG2328S, SMG2329P, SMG2330N, SMG2334N, SMG2334NE, SMG2336N
Keywords - SMG2327P MOSFET specs
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History: APJ14N65D | 2SK4057 | VBE1202 | IPI80P03P4L-07
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