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SMG2334NE Specs and Replacement

Type Designator: SMG2334NE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 76 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm

Package: SC59

SMG2334NE substitution

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SMG2334NE datasheet

 ..1. Size:291K  secos
smg2334ne.pdf pdf_icon

SMG2334NE

SMG2334NE 3.5A , 30V , RDS(ON) 58 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high A cell density trench process to provide low RDS(on) and to L ensure minimal power loss and heat dissipation. 3 3 Top View C B 1 1 ... See More ⇒

 6.1. Size:407K  secos
smg2334n.pdf pdf_icon

SMG2334NE

SMG2334N 3.5A, 30V, RDS(ON) 60m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and A L to ensure minimal power loss and heat dissipation. 3 3 Top View C B 1 1 2... See More ⇒

 8.1. Size:65K  secos
smg2330n.pdf pdf_icon

SMG2334NE

SMG2330N 5.2A, 30V, RDS(ON) 32m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize High A Cell Density process. Low RDS(on) assures minimal power L loss and conserves energy, making this device ideal for 3 3 use... See More ⇒

 8.2. Size:68K  secos
smg2336n.pdf pdf_icon

SMG2334NE

SMG2336N 2.5 A, 30 V, RDS(ON) 32 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. A L 3 3 Top ... See More ⇒

Detailed specifications: SMG2326N, SMG2327P, SMG2328, SMG2328NE, SMG2328S, SMG2329P, SMG2330N, SMG2334N, IRF9540N, SMG2336N, SMG2339P, SMG2340N, SMG2340NE, SMG2342N, SMG2342NE, SMG2343, SMG2343P

Keywords - SMG2334NE MOSFET specs

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