All MOSFET. SMG2391P Datasheet

 

SMG2391P MOSFET. Datasheet pdf. Equivalent


   Type Designator: SMG2391P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 0.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 41 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: SC59

 SMG2391P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SMG2391P Datasheet (PDF)

 ..1. Size:1822K  secos
 smg2391p.pdf

SMG2391P SMG2391P

SMG2391P -0.9A , -150V , RDS(ON) 1.2 P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free SC-59 FEATURES Low RDS(on) trench technology AL Low thermal impedance 33 Fast switching speed Top View C B11 22K EAPPLICATIONS D PoE Power Sourcing Equipment

 8.1. Size:136K  secos
 smg2390n.pdf

SMG2391P SMG2391P

SMG2390N N-Channel Enhancement Mode Mos.FET 1.1 A, 150 V, RDS(ON) 0.700 Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power ALloss and heat dissipation. Typical applica

 8.2. Size:140K  secos
 smg2398ne.pdf

SMG2391P SMG2391P

SMG2398NE 2.2 A, 60 V, RDS(ON) 194 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss ALand heat dissipation. Typical applicat

 8.3. Size:137K  secos
 smg2398n.pdf

SMG2391P SMG2391P

SMG2398N 2.2 A, 60 V, RDS(ON) 194 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, ALmaking this device ideal for use in power

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