SMG5403
MOSFET. Datasheet pdf. Equivalent
Type Designator: SMG5403
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.38
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Id|ⓘ - Maximum Drain Current: 2.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 4.6
nS
Cossⓘ -
Output Capacitance: 55
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.115
Ohm
Package:
SC59
SMG5403
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SMG5403
Datasheet (PDF)
..1. Size:364K secos
smg5403.pdf
SMG5403 -2.6A , -30V , RDS(ON) 115 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 The SMG5403 uses advanced trench technology to Aprovide excellent on-resistance with low gate change. L3The device is suitable for use as a load switch or in P
8.1. Size:1666K secos
smg5406.pdf
SMG5406 3.6A , 30V , RDS(ON) 65 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free SC-59 DESCRIPTION The SMG5406 utilized advanced processing ALtechniques to achieve the lowest possible on-resistance, 33extremely efficient and cost-effectiveness device. The To
8.2. Size:1688K secos
smg5409.pdf
SMG5409 -2.6A , -30V , RDS(ON) 120 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free SC-59 DESCRIPTION AThe SMG5409 provide the designer with best combination L3of fast switching, low on-resistance and cost-effectiveness. 3The SMG5409 is universally preferred f
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