SMS318 Datasheet and Replacement
Type Designator: SMS318
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 13 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
Package: SOT23
SMS318 substitution
SMS318 Datasheet (PDF)
sms318.pdf

SMS318 220mA, 50V, RDS(ON) 3.5 N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Low On-Resistance A Low Gate Threshold Voltage L3 Low Input Capacitance 3 Fast Switching Speed Top ViewC B Low Input/Output Leakage 11 2 2K EMECHANICAL DATA
Datasheet: SMG3400 , SMG3401 , SMG3402 , SMG3403 , SMG3407 , SMG5403 , SMG5406 , SMG5409 , 10N65 , SMS4003K , SMS840 , SSD02N65 , SSD10N20-400D , SSD12P10 , SSD15N10 , SSD20N06-90D , SSD20N10-250D .
History: SWF8N65DB | IRFB4137PBF
Keywords - SMS318 MOSFET datasheet
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History: SWF8N65DB | IRFB4137PBF



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