All MOSFET. SSD02N65 Datasheet


SSD02N65 MOSFET. Datasheet pdf. Equivalent

Type Designator: SSD02N65

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 18.4 nS

Drain-Source Capacitance (Cd): 25 pF

Maximum Drain-Source On-State Resistance (Rds): 8 Ohm

Package: TO252

SSD02N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


SSD02N65 Datasheet (PDF)

0.1. ssd02n65.pdf Size:1443K _secos


SSD02N65 2A , 650V , RDS(ON) 8Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD02N65 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter ap

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