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SSD02N65 Spec and Replacement


   Type Designator: SSD02N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18.4 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: TO252

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SSD02N65 Specs

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SSD02N65

SSD02N65 2A , 650V , RDS(ON) 8 N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD02N65 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter ap... See More ⇒

Detailed specifications: SMG3403 , SMG3407 , SMG5403 , SMG5406 , SMG5409 , SMS318 , SMS4003K , SMS840 , 2SK3568 , SSD10N20-400D , SSD12P10 , SSD15N10 , SSD20N06-90D , SSD20N10-250D , SSD20N15-250D , SSD20P06-135D , SSD2504 .

History: IXTP26P20P | IXFX66N50Q2 | F20N50 | F25N10 | CEM3307 | H5N2503P | 3N140

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