SSD02N65 Datasheet and Replacement
Type Designator: SSD02N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18.4 nS
Cossⓘ - Output Capacitance: 25 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
Package: TO252
SSD02N65 substitution
SSD02N65 Datasheet (PDF)
ssd02n65.pdf

SSD02N65 2A , 650V , RDS(ON) 8 N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD02N65 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter ap
Datasheet: SMG3403 , SMG3407 , SMG5403 , SMG5406 , SMG5409 , SMS318 , SMS4003K , SMS840 , 5N65 , SSD10N20-400D , SSD12P10 , SSD15N10 , SSD20N06-90D , SSD20N10-250D , SSD20N15-250D , SSD20P06-135D , SSD2504 .
History: IRLZ44PBF
Keywords - SSD02N65 MOSFET datasheet
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History: IRLZ44PBF



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