SSD02N65 MOSFET. Datasheet pdf. Equivalent
Type Designator: SSD02N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 40 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 2 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 18.4 nS
Drain-Source Capacitance (Cd): 25 pF
Maximum Drain-Source On-State Resistance (Rds): 8 Ohm
Package: TO252
SSD02N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSD02N65 Datasheet (PDF)
0.1. ssd02n65.pdf 
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SSD02N65 2A , 650V , RDS(ON) 8Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD02N65 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter ap
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