All MOSFET. SSD10N20-400D Datasheet

 

SSD10N20-400D Datasheet and Replacement


   Type Designator: SSD10N20-400D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 9.2 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 60 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO252
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SSD10N20-400D Datasheet (PDF)

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SSD10N20-400D

SSD10N20-400D N-Ch Enhancement Mode Power MOSFET 9.2A, 200V, RDS(ON) 400m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench TO-252(D-Pack)process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications ar

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: JCS2N60CB | 2SK4096LS | UT8205A | AOD1R4A70 | SMK0965FJ | STB8NM60 | WML11N80M3

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