SSD10N20-400D Specs and Replacement
Type Designator: SSD10N20-400D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9.2 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO252
SSD10N20-400D substitution
- MOSFET ⓘ Cross-Reference Search
SSD10N20-400D datasheet
ssd10n20-400d.pdf
SSD10N20-400D N-Ch Enhancement Mode Power MOSFET 9.2A, 200V, RDS(ON) 400m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench TO-252(D-Pack) process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications ar... See More ⇒
Detailed specifications: SMG3407, SMG5403, SMG5406, SMG5409, SMS318, SMS4003K, SMS840, SSD02N65, 10N65, SSD12P10, SSD15N10, SSD20N06-90D, SSD20N10-250D, SSD20N15-250D, SSD20P06-135D, SSD2504, SSD2504S
Keywords - SSD10N20-400D MOSFET specs
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SSD10N20-400D replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: SI3455ADV | SI3456CDV | STF20NM60D
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