All MOSFET. SSD10N20-400D Datasheet

 

SSD10N20-400D Datasheet and Replacement


   Type Designator: SSD10N20-400D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9.2 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 60 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO252
 

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SSD10N20-400D Datasheet (PDF)

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SSD10N20-400D

SSD10N20-400D N-Ch Enhancement Mode Power MOSFET 9.2A, 200V, RDS(ON) 400m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench TO-252(D-Pack)process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications ar

Datasheet: SMG3407 , SMG5403 , SMG5406 , SMG5409 , SMS318 , SMS4003K , SMS840 , SSD02N65 , STP80NF70 , SSD12P10 , SSD15N10 , SSD20N06-90D , SSD20N10-250D , SSD20N15-250D , SSD20P06-135D , SSD2504 , SSD2504S .

History: SVGP20110NP7 | CST30N10U | IPD65R400CE | SFW097N200C3 | SSD12P10 | OSG80R190PF | AONX38320

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