SSD15N10 Specs and Replacement
Type Designator: SSD15N10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 44.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8.2 nS
Cossⓘ - Output Capacitance: 60 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO252
SSD15N10 substitution
- MOSFET ⓘ Cross-Reference Search
SSD15N10 datasheet
ssd15n10.pdf
SSD15N10 15A, 100V, RDS(ON) 110m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD15N10 provide the designer with the best combination of fast switching. The TO-252 package is universally preferred for all commercial-industrial surface mount applications. The... See More ⇒
Detailed specifications: SMG5406, SMG5409, SMS318, SMS4003K, SMS840, SSD02N65, SSD10N20-400D, SSD12P10, RFP50N06, SSD20N06-90D, SSD20N10-250D, SSD20N15-250D, SSD20P06-135D, SSD2504, SSD2504S, SSD3055, SSD30N03-40D
Keywords - SSD15N10 MOSFET specs
SSD15N10 cross reference
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SSD15N10 substitution
SSD15N10 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: APM4101K | SMS4003K | AGMH614C
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