SSD30N03-40D MOSFET. Datasheet pdf. Equivalent
Type Designator: SSD30N03-40D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 34 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 4 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 165 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
Package: TO252
SSD30N03-40D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSD30N03-40D Datasheet (PDF)
ssd30n03-40d.pdf
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