SSD30N06-39D MOSFET Datasheet: N-Ch, 60V, 19A. Full specification with pinout and replacement list

SSD30N06-39D Specs and Replacement

Type Designator: SSD30N06-39D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm

Package: TO252

SSD30N06-39D substitution

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SSD30N06-39D datasheet

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SSD30N06-39D N-Ch Enhancement Mode Power MOSFET 30A, 60V, RDS(ON) 38 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are ... See More ⇒

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SSD30N03-40D N-Ch Enhancement Mode Power MOSFET 34A, 30V, RDS(ON) 26m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES ... See More ⇒

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SSD30N10-50D 26A, 100V, RDS(ON) 50m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low R... See More ⇒

8.2. Size:393K secos
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