SSD30N06-39D MOSFET. Datasheet pdf. Equivalent
Type Designator: SSD30N06-39D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 19 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 12.5 nC
trⓘ - Rise Time: 8 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
Package: TO252
SSD30N06-39D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSD30N06-39D Datasheet (PDF)
ssd30n06-39d.pdf
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