SSD40N04-20D MOSFET. Datasheet pdf. Equivalent
Type Designator: SSD40N04-20D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 39 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 272 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: TO252
SSD40N04-20D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSD40N04-20D Datasheet (PDF)
ssd40n04-20d.pdf
SSD40N04-20D N-Ch Enhancement Mode Power MOSFET 39A, 40V, RDS(ON) 22m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack)DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power manageme
ssd40n03.pdf
SSD40N0336A, 30V,RDS(ON)21m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductDescriptionTO-252The SSD40N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 is universally preferred for all commercial-industrial surface mount applications
ssd40n10-30d.pdf
SSD40N10-30D 26A, 100V, RDS(ON) 36m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free FEATURES TO-252(D-Pack) Low RDS(on) trench technology. Low thermal impedance. Fast switching speed. APPLICATION PoE Power Sourcing Equipment. ACB PoE Powered Devices. D Telecom DC/DC converte
ssd40p04-20d.pdf
SSD40P04-20D P-Ch Enhancement Mode Power MOSFET -36A, -40V, RDS(ON) 30m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. TO-252(D-Pack)Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power manageme
ssd40p04-20de.pdf
SSD40P04-20DE -36A , -40V , RDS(ON) 30m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES A Lo
ssd408.pdf
SSD40818A, 30V,RDS(ON)18m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductDescriptionTO-252The SSD408 uses advanced trench technology to provide excellent on-resistance and low gate charge.The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for use as a load switch or in
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: IXFN55N50
History: IXFN55N50
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918