All MOSFET. SSD45N03 Datasheet

 

SSD45N03 Datasheet and Replacement


   Type Designator: SSD45N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 15 nC
   tr ⓘ - Rise Time: 57.5 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO252
 

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SSD45N03 Datasheet (PDF)

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SSD45N03

SSD45N0345A, 25V,RDS(ON)9m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETDescriptionTO-252The SSD45N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 is universally preferred for all commercial-industrial surface mount applications and suited for low voltag

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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